A Comprehensive Characterization of Stress Relaxed ZnO …
507
dyne/cm
2 range as a function of oxygen partial pressure. The residual stress strongly
depends on the processing parameters and nearly stress-free films are obtained using
a unique combination of sputter parameters. The mechanical, structural, and optical
properties are correlated. Low-stress ZnO piezoelectric films are highly desirable for
MEMS device applications.
Acknowledgements Authors are thankful to Director CSIR-CEERI Pilani for continuous support
and encouragement. This research work was supported by the 12th Plan network project PSC-0102
(R-Nano). Mr. Arvind Kumar Singh and Mr. Prateek Kothari helped to maintain ZnO sputtering
machine.
References
Agarwal DC, Chauhan RS, Amit Kumar D, Kabiraj F, Singh SA, Khan DK, Avasthi JC, Pivin M,
Kumar JG, Satyam PV (2006) Synthesis and characterization of ZnO thin film grown by electron
beam evaporation. J Appl Phys 99:123105
Arguello CA, Rousseau DL, Porto SPS (1969) First-order Raman effect in wurtzite-type crystals.
Phys Rev 181:1351
Ashrafi ABMA, Binh NT, Zhang BP, Segawa Y (2004) Strain relaxation and its effect in exciton
resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates. Appl Phys Lett 84:2814
Baraki R, Novak N, Frömling T, Granzow T, Rödel J (2014) Bulk ZnO as piezotronic pressure
sensor. App Phys Lett 105:111604
Conchon F, Renault PO, Goudeau P, Le Bourhis E, Sondergard E, Barthel E, Grachev S, Gouardes
E, Rondeau V, Gy R, Lazzari R, Jupille J, Brun N (2010) X-ray diffraction analysis of thermallyinduced stress relaxation in ZnO films deposited by magnetron sputtering on (100) Si substrates.
Thin Sol Films 518:5237
Damen TC, Porto PS, Tell B (1966) Raman effect in zinc oxide. Phy Review 142:570
Drese RJ, Wuttig M (2005) Stress evolution during growth in direct-current-sputtered zinc oxide
films at various oxygen flows. J Appl Phys 98:073514
El Zawawi LK, Abd Alla RA (1999) Electrical and optical phototransformation properties in As
doped Se thin films. Thin Sol Films 339:314
Engelmark F, Fucntes G, Katardjiev IV, Harsta A, Smithand U, Berg S (2000). Synthesis of highly
oriented piezoelectric AlN films by reactive sputter deposition. J Vac Sci Technol A 18:1609
Fu YQ, Luo JK, Du XY, Flewitt AJ, Li Y, Markx GH, Walton AJ, Milne WI (2010) Recent developments on ZnO films for acoustic wave based bio-sensing and microfluidic applications: a review.
Sens Actuators B 143:606
Gardeniers JGE, Rittersma ZM, Burger GJ (1998) Preferred orientation and piezoelectricity in
sputtered ZnO films. J Appl Phys 83:7844
Ghosh R, Basak D, Fujihara S (2004) Effect of substrate-induced strain on the structural, electrical,
and optical properties of polycrystalline ZnO thin films. J Appl Phys 96:2689
Iborra E, Olivares J, Clement M, Vergara J, Sanz-Hervas A, Sangrador J (2004) Piezoelectric
properties and residual stress of sputtered AlN thin films for MEMS applications. Sens Actuators
A 115:501
Ivanova T, Harizanova A, Koutzarova T, Vertruyen B (2010) Study of ZnO sol–gel films: effect of
annealing. Mater Lett 64:1147
Joshi P, Singh J, Sharma R, Jain VK, Akhtar J (2018) A facile approach to fabricate ZnO thin film
based micro-cantilevers. Microelectron Eng 187–188:50–57
507
dyne/cm
2 range as a function of oxygen partial pressure. The residual stress strongly
depends on the processing parameters and nearly stress-free films are obtained using
a unique combination of sputter parameters. The mechanical, structural, and optical
properties are correlated. Low-stress ZnO piezoelectric films are highly desirable for
MEMS device applications.
Acknowledgements Authors are thankful to Director CSIR-CEERI Pilani for continuous support
and encouragement. This research work was supported by the 12th Plan network project PSC-0102
(R-Nano). Mr. Arvind Kumar Singh and Mr. Prateek Kothari helped to maintain ZnO sputtering
machine.
References
Agarwal DC, Chauhan RS, Amit Kumar D, Kabiraj F, Singh SA, Khan DK, Avasthi JC, Pivin M,
Kumar JG, Satyam PV (2006) Synthesis and characterization of ZnO thin film grown by electron
beam evaporation. J Appl Phys 99:123105
Arguello CA, Rousseau DL, Porto SPS (1969) First-order Raman effect in wurtzite-type crystals.
Phys Rev 181:1351
Ashrafi ABMA, Binh NT, Zhang BP, Segawa Y (2004) Strain relaxation and its effect in exciton
resonance energies of epitaxial ZnO layers grown on 6H-SiC substrates. Appl Phys Lett 84:2814
Baraki R, Novak N, Frömling T, Granzow T, Rödel J (2014) Bulk ZnO as piezotronic pressure
sensor. App Phys Lett 105:111604
Conchon F, Renault PO, Goudeau P, Le Bourhis E, Sondergard E, Barthel E, Grachev S, Gouardes
E, Rondeau V, Gy R, Lazzari R, Jupille J, Brun N (2010) X-ray diffraction analysis of thermallyinduced stress relaxation in ZnO films deposited by magnetron sputtering on (100) Si substrates.
Thin Sol Films 518:5237
Damen TC, Porto PS, Tell B (1966) Raman effect in zinc oxide. Phy Review 142:570
Drese RJ, Wuttig M (2005) Stress evolution during growth in direct-current-sputtered zinc oxide
films at various oxygen flows. J Appl Phys 98:073514
El Zawawi LK, Abd Alla RA (1999) Electrical and optical phototransformation properties in As
doped Se thin films. Thin Sol Films 339:314
Engelmark F, Fucntes G, Katardjiev IV, Harsta A, Smithand U, Berg S (2000). Synthesis of highly
oriented piezoelectric AlN films by reactive sputter deposition. J Vac Sci Technol A 18:1609
Fu YQ, Luo JK, Du XY, Flewitt AJ, Li Y, Markx GH, Walton AJ, Milne WI (2010) Recent developments on ZnO films for acoustic wave based bio-sensing and microfluidic applications: a review.
Sens Actuators B 143:606
Gardeniers JGE, Rittersma ZM, Burger GJ (1998) Preferred orientation and piezoelectricity in
sputtered ZnO films. J Appl Phys 83:7844
Ghosh R, Basak D, Fujihara S (2004) Effect of substrate-induced strain on the structural, electrical,
and optical properties of polycrystalline ZnO thin films. J Appl Phys 96:2689
Iborra E, Olivares J, Clement M, Vergara J, Sanz-Hervas A, Sangrador J (2004) Piezoelectric
properties and residual stress of sputtered AlN thin films for MEMS applications. Sens Actuators
A 115:501
Ivanova T, Harizanova A, Koutzarova T, Vertruyen B (2010) Study of ZnO sol–gel films: effect of
annealing. Mater Lett 64:1147
Joshi P, Singh J, Sharma R, Jain VK, Akhtar J (2018) A facile approach to fabricate ZnO thin film
based micro-cantilevers. Microelectron Eng 187–188:50–57