527
Index
Tunneling
interband, 348–349, 349f, 360
mechanism, 348–351
width (∆Ф), 347
Zener, 348
Two-dimensional (2D)
cross section of ideal MOS capacitor,
84f
numerical simulation, 274
Poisson’s equation, 329
Typical composition of compact models
of IC technology, 2f
U
UCCM, See Unified charge control
model (UCCM)
Ultrathin-body (UTB) field-effecttransistors (FETs) (UTB-FETs),
313, 335
Unified charge-control model, 395
Unified charge control model
(UCCM), 12
Unified drain current equation, 204–205
Unified theory, 266
Upper limit (UL) values, 294–295
V
Valence band (VB), 20
Variation of induced charge
density, 105f
Variation of Q b , Q s , and Q i , 108f
Velocity saturation, 35–36, 175
channel, 271
Vertical cross section of intrinsic
pn-junction, 51f
Very-large-scale-integrated (VLSI), 3, 54,
175, 274, 285, 371, 423
bipolar junction transistor (BJT), 371
generalized modeling approach
for process variability-aware,
297f
I–V relation, 299
risk of process variability, 309–310
Virtual node method, 365
VLSI, See Very-large-scale-integrated
(VLSI)
Voltage-controlled variable
resistors, 154
Volume inversion, 328
W
Ward–Dutton charge partition method,
239, 336, 340
Weak inversion
current, 164
regime, 98
region, 5
Wentzel–Kramers–Brillouin (WKB),
348–349
Work functions of commonly used gate
material, 87t
Worst-case fixed corner models,
294–296
fixed corner models, 295f
lower limit (LL) values, 294–295
upper limit (UL) values, 294–295
Z
Zener breakdown, 72
Zener tunneling, 348