18
Compact Models for Integrated Circuit Design
the increase in the complexities of MOS devices and technologies, compact
MOS models based on surface potential and inversion charge started to
emerge, especially to fulfil the increasing demands for analog and digital
applications. These physics-based emerging models promise to simulate
nano-MOSFET device characteristics in both digital and analog ICs. The
accuracy, predictability, and longevity of these emerging models to meet
the design challenges of MOS ICs down to 10  nm regimes are still to be
seen. Finally, the motivation for compact modeling, the usage of compact
models, and model standardization are briefly discussed.
Exercises
1.1 Double gate and multiple gate thin-body FETs like FinFETs and
UTB-SOI FETs have emerged as the alternative devices to planar
MOSFETs for advanced VLSI circuits. Write a brief history of the
compact modeling of multiple gate FETs.
1.2 Write a brief history of compact modeling of the emerging devices
including tunnel FETs as the potential alternative to next generation
devices for VLSI circuits.