17
Introduction to Compact Models
1.5 Compact Model Standardization
From the brief history of compact device models in Section 1.2, we find that
a large number of compact MOSFET models have been developed over the
past 40 years and are continued to date. Therefore, it is extremely difficult to
generate, maintain, and support a large number of model libraries for a large
number of process technologies for circuit CAD by device engineers of a
manufacturing company. In order to improve the efficiency of compact modeling for circuit CAD, model developers and users have made a joint effort
to establish a standard compact model for each IC device with robustness,
accuracy, scalability, and computational efficiency to meet the needs of digital, analog, and mixed analog/digital designs. A standard model common to
all or most semiconductor manufacturers and circuit CAD tools is desirable
to facilitate intercompany collaborations.
With the objective of compact model standardization, an independent
Compact Model Council, CMC was founded in 1996, consisting of many
leading companies in the semiconductor industry. The charter of CMC is to
promote the international, nonexclusive standardization of compact model
formulations and the model interfaces. The CMC standardizes compact
models for all major technologies to enhance the design efficiency, performs
extensive model testing for model validation, and ensures robustness and
accuracy of compact models for the latest technologies to shorten leadingedge design development cycle time. In 2013, CMC has become a part of
an EDA standardization forum, Si2, to continue offering compact model
standardization.
1.6 Summary
This chapter presents an overview of compact modeling for circuit CAD
and the constituents of compact models to mathematically describe the
real device effects. A brief history of compact MOSFET models for circuit
simulation from the first Schimann-Hodges in 1970s to the recent surface
potential–based and inversion charge–based models is presented. It is
found that the early compact MOS models consist of physics-based analytical expressions to simulate the basic characteristics of devices in digital circuits. These models were continuously updated using empirical equations
containing empirical fitting parameters to facilitate efficient circuit simulation. During 1980s physics-based compact MOS models with well-behaved
mathematical smoothing functions were introduced, which describe the
characteristics of scaled devices in all regions of circuit operation. With
Introduction to Compact Models
1.5 Compact Model Standardization
From the brief history of compact device models in Section 1.2, we find that
a large number of compact MOSFET models have been developed over the
past 40 years and are continued to date. Therefore, it is extremely difficult to
generate, maintain, and support a large number of model libraries for a large
number of process technologies for circuit CAD by device engineers of a
manufacturing company. In order to improve the efficiency of compact modeling for circuit CAD, model developers and users have made a joint effort
to establish a standard compact model for each IC device with robustness,
accuracy, scalability, and computational efficiency to meet the needs of digital, analog, and mixed analog/digital designs. A standard model common to
all or most semiconductor manufacturers and circuit CAD tools is desirable
to facilitate intercompany collaborations.
With the objective of compact model standardization, an independent
Compact Model Council, CMC was founded in 1996, consisting of many
leading companies in the semiconductor industry. The charter of CMC is to
promote the international, nonexclusive standardization of compact model
formulations and the model interfaces. The CMC standardizes compact
models for all major technologies to enhance the design efficiency, performs
extensive model testing for model validation, and ensures robustness and
accuracy of compact models for the latest technologies to shorten leadingedge design development cycle time. In 2013, CMC has become a part of
an EDA standardization forum, Si2, to continue offering compact model
standardization.
1.6 Summary
This chapter presents an overview of compact modeling for circuit CAD
and the constituents of compact models to mathematically describe the
real device effects. A brief history of compact MOSFET models for circuit
simulation from the first Schimann-Hodges in 1970s to the recent surface
potential–based and inversion charge–based models is presented. It is
found that the early compact MOS models consist of physics-based analytical expressions to simulate the basic characteristics of devices in digital circuits. These models were continuously updated using empirical equations
containing empirical fitting parameters to facilitate efficient circuit simulation. During 1980s physics-based compact MOS models with well-behaved
mathematical smoothing functions were introduced, which describe the
characteristics of scaled devices in all regions of circuit operation. With