88
R. Chen et al.
Table 3.2
(continued)
Metal oxide catalyst
Precursor
Deposition temperature
Support
Catalytic reaction
MnO
x [126]
Mn(EtCp)
2 –H
2 O [126]
175 °C [126]
SiO
2 [126]
Syngas conversion to higher
oxygenates [126]
CeO
x [106, 127]
Ce(thd)
4 –O
3 [127]
200 °C [127]
Al
2 O
3 [106]
1-propanol reforming [106]
CO oxidation [127]
La
2 O
3 [128]
La(thd)
3 –O
3 [128]
300 °C [128]
Fe
2 O
3 [128]
Photoelectrochemical water
oxidation [128]
ZrO
2 [129, 130]
Zr(NMe
2 )
4 –H
2 O [129, 130]
180 °C [129]
150–250 °C [130]
Al
2 O
3 [129]
GNS [130]
Methane oxidation [129]
Electrochemical capacitance
[130]
VO
x [131, 132]
VTIP-H
2 O
2 –H
2 0 [131]
VO(acac)
2 )–O
2 [132]
100 °C [131]
250 °C [132]
Al
2 O
3 [131]
SiO
2 /Al
2 O
3 [132]
Oxidative dehydrogenation of
cyclohexane [131]
Propane dehydrogenation
[132]
WO
3 [133, 134, 166] WCl
6 -air [133]
(tBuN)
2 (Me
2 N)
2 W
-H
2 O [166]
W(CO)
6 -oxidants [134]
350 °C [166]
195–205 °C [134]
SBA-15 [133]
TiSi
2 [166]
ZrO
2 [134]
2-butanol dehydration [133]
Water splitting [166]
2-propanol dehydration [134]
NbO
x [87, 135]
Nb(OCH
2 CH
3 )
5 –H
2 O [129,
135]
135 °C [135]
200 °C [87]
SBA-15 [135]
spSiO
2 [87]
2-propanol dehydration [135]
Furfural hydrogenation [87]
SiO
2 [136, 137]
Si(OCH
3 )
4 –H
2 O [136]
Si(OC
2 H
5 )
4 –H
2 O [137]
50 °C [136]
150 °C [137]
TiO
2 [136]
Al
2 O
3 [137]
CO oxidation [136]
Cyclohexanol dehydration
[137]