voltage. Hence, function of Drain, Gate and Source terminals can be correlated
to Emitter, Base and collector terminals of BJTs. It can be classified as JFET
and MOSFET (or IGFET) [36].
• Junction Field-Effect Transistor (JFET) is a three terminal voltage controlled unipolar device having N-channel and P-channel configurations. It
is typically used in high frequency or high current systems e.g. microwave
amplifiers [36].
• Metal oxide FET (MOSFET) or IGFET (Insulated Gate FET), is a voltage
controlled FET having thin layer of “Metal Oxide” to form insulated Gate
electrode [36].
5 Metal Oxide Semiconductor Field Effect Transistors
As compared to BJTs, MOSFETs occupy very small space on an IC and hence
VLSI integration can be realized by using MOSFETs. Using VLSI, some electronic
circuits are designed by using only MOSFETs and essentially not using any resistor
and/or diodes. This can fabrication is used in forming microprocessors, high density
memory devices.
5.1 Principle of Working
the current flow is attained by put on electric field perpendicular to drain and source
terminals and in the direction of flow of electric current. The phenomenon of
controlling conductance of semiconductor using electric field is known as Field
Effect or gating effect [35].
5.2 Physics Involved in Working of MOSFETs
In order to understand it, let’s consider a parallel plate capacitor in which, two
charged plates are separated by an insulating material substrate. At the top of the
metal plate, a negatively biased voltage is applied and hence, other plate will be
positively charged and an upwards electric field will be generated into the substrate.
In influence of induced electric field and the type of substrate material (p-type or
n-type) will result in the formation of a region of charge accumulation known as
inversion layer. For illustrating it, let’s consider an example that, lets we have taken
a p-type substrate and a negatively biased voltage (with respect to the type of
substrate) For simplifying the explanation, let’s consider the MOSFET as simple
parallel plate capacitor which is separated by a semiconducting material and an
112
C. Sharma et al.
to Emitter, Base and collector terminals of BJTs. It can be classified as JFET
and MOSFET (or IGFET) [36].
• Junction Field-Effect Transistor (JFET) is a three terminal voltage controlled unipolar device having N-channel and P-channel configurations. It
is typically used in high frequency or high current systems e.g. microwave
amplifiers [36].
• Metal oxide FET (MOSFET) or IGFET (Insulated Gate FET), is a voltage
controlled FET having thin layer of “Metal Oxide” to form insulated Gate
electrode [36].
5 Metal Oxide Semiconductor Field Effect Transistors
As compared to BJTs, MOSFETs occupy very small space on an IC and hence
VLSI integration can be realized by using MOSFETs. Using VLSI, some electronic
circuits are designed by using only MOSFETs and essentially not using any resistor
and/or diodes. This can fabrication is used in forming microprocessors, high density
memory devices.
5.1 Principle of Working
the current flow is attained by put on electric field perpendicular to drain and source
terminals and in the direction of flow of electric current. The phenomenon of
controlling conductance of semiconductor using electric field is known as Field
Effect or gating effect [35].
5.2 Physics Involved in Working of MOSFETs
In order to understand it, let’s consider a parallel plate capacitor in which, two
charged plates are separated by an insulating material substrate. At the top of the
metal plate, a negatively biased voltage is applied and hence, other plate will be
positively charged and an upwards electric field will be generated into the substrate.
In influence of induced electric field and the type of substrate material (p-type or
n-type) will result in the formation of a region of charge accumulation known as
inversion layer. For illustrating it, let’s consider an example that, lets we have taken
a p-type substrate and a negatively biased voltage (with respect to the type of
substrate) For simplifying the explanation, let’s consider the MOSFET as simple
parallel plate capacitor which is separated by a semiconducting material and an
112
C. Sharma et al.