/
Permalien :
Strain-engineered MOSFETs
- Date_TXT
- Boca Raton: CRC Press, 2018
- Auteur
- Maiti C.K., Maiti T.K.
- Type de document
- Livre
Description :
This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization
French
