62
M. I. Stockman
Fig. 1.27 InGaN nanospaser and its properties. a Schematics of geometry of InGaN/GaN coreshell nanospaser (left) and theoretical intensity of its spasing eigenmode. b Series of emission
spectra: Temperature-dependent spasing behavior from 8 to 300 K. The spasing threshold at 140 K
is clearly visible. c The L–L (light–light) plots at the main lasing peak (510 nm) are shown with
the corresponding linewidth-narrowing behavior when the spaser is measured at 8 K (red) and 78 K
(blue), with lasing thresholds of 2.1 and 3.7 kW/cm 2 , respectively. d Second-order photon correlation function g (2) (τ ) measured at 8 K. The upper curve is recorded below the spasing threshold,
and the lower above the threshold. Adapted from Ref. [283]
emission where the slopes are greater than one. The regime of developed spasing
takes place at high intensities where the L–L curves become unit-slope straight lines
without a saturation. As have already been mentioned above, this is a universal
behavior.
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