2018
159. “Nanoarchitectonics for controlling the number of dopant atoms in solid
electrolyte nanodots”
A. Nayak, S. Unayama, S. Tai, T. Tsuruoka, R. Waser, M. Aono, I. Valov,
and T. Hasegawa
Advanced Materials 30 (2018) 1703261.
DOI: 10.1002/adma.201703261
160. “Neuromorphic transistor achieved by redox reaction of WO 3 thin film”
T. Tsuchiya, M. Jayabalan, K. Kawamura, M. Takayanagi, T. Higuchi,
R. Jayavel, and K. Terabe
Japanese Journal of Applied Physics 57 (2018) 04FK01.
DOI: 10.7567/JJAP.57.04fk01
161. “The rate limiting process and its activation energy in the forming process of a
Cu/Ta 2 O 5 /Pt gapless-type atomic switch”
Y. Shigeoka, T. Tsuruoka, and T. Hasegawa
Japanese Journal of Applied Physics 57 (2018) 035202.
DOI: 10.7567/JJAP.57.035202
162. “Thermally stable resistive switching of a polyvinyl alcohol-based atomic
switch”
K. Krishnan, M. Aono, and T. Tsuruoka
Journal of Materials Chemistry C 6 (2018) 6460–6464.
DOI: 10.1039/c8tc01809j
163. “Ionic decision-maker created as novel, solid-state devices”
T. Tsuchiya, T. Tsuruoka, S. -J. Kim, K. Terabe, and M. Aono
Science Advances 4 (2018) eaau2057.
DOI: 10.1126/sciadv.aau2057
164. “Development of a molecular gap-type atomic switch and its stochastic
operation”
C. Arima, A. Suzuki, A. Kasai, T. Tsuruoka, and T. Hasegawa
Journal of Applied Physics 124 (2018) 152114.
DOI: 10.1063/1.5037657
165. “Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in
operating gate bias and gate leakage current”
Q. Wang, Y. Itoh, T. Tsuruoka, M. Aono, H. Deyan, and T. Hasegawa
Solid State Ionics 328 (2018) 30–34.
DOI: 10.1016/j.ssi.2018.11.004
166. “Effects of moisture and redox reactions in VCM and ECM resistive switching
memories”
I. Valov and T. Tsuruoka
Journal of Physics D: Applied Physics 51 (2018) 413001.
DOI: 10.1018/1361-6463/aad581
167. “Atomic switch networks as complex adaptive systems”
K. S. Schernhorst, J. P. Carbajal, R. C. Aguilera, E. J. Sandouk, M. Aono,
A. Z. Stieg, and J. K. Gimzewski
A List of Papers Related to the Atomic Switch
265
159. “Nanoarchitectonics for controlling the number of dopant atoms in solid
electrolyte nanodots”
A. Nayak, S. Unayama, S. Tai, T. Tsuruoka, R. Waser, M. Aono, I. Valov,
and T. Hasegawa
Advanced Materials 30 (2018) 1703261.
DOI: 10.1002/adma.201703261
160. “Neuromorphic transistor achieved by redox reaction of WO 3 thin film”
T. Tsuchiya, M. Jayabalan, K. Kawamura, M. Takayanagi, T. Higuchi,
R. Jayavel, and K. Terabe
Japanese Journal of Applied Physics 57 (2018) 04FK01.
DOI: 10.7567/JJAP.57.04fk01
161. “The rate limiting process and its activation energy in the forming process of a
Cu/Ta 2 O 5 /Pt gapless-type atomic switch”
Y. Shigeoka, T. Tsuruoka, and T. Hasegawa
Japanese Journal of Applied Physics 57 (2018) 035202.
DOI: 10.7567/JJAP.57.035202
162. “Thermally stable resistive switching of a polyvinyl alcohol-based atomic
switch”
K. Krishnan, M. Aono, and T. Tsuruoka
Journal of Materials Chemistry C 6 (2018) 6460–6464.
DOI: 10.1039/c8tc01809j
163. “Ionic decision-maker created as novel, solid-state devices”
T. Tsuchiya, T. Tsuruoka, S. -J. Kim, K. Terabe, and M. Aono
Science Advances 4 (2018) eaau2057.
DOI: 10.1126/sciadv.aau2057
164. “Development of a molecular gap-type atomic switch and its stochastic
operation”
C. Arima, A. Suzuki, A. Kasai, T. Tsuruoka, and T. Hasegawa
Journal of Applied Physics 124 (2018) 152114.
DOI: 10.1063/1.5037657
165. “Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in
operating gate bias and gate leakage current”
Q. Wang, Y. Itoh, T. Tsuruoka, M. Aono, H. Deyan, and T. Hasegawa
Solid State Ionics 328 (2018) 30–34.
DOI: 10.1016/j.ssi.2018.11.004
166. “Effects of moisture and redox reactions in VCM and ECM resistive switching
memories”
I. Valov and T. Tsuruoka
Journal of Physics D: Applied Physics 51 (2018) 413001.
DOI: 10.1018/1361-6463/aad581
167. “Atomic switch networks as complex adaptive systems”
K. S. Schernhorst, J. P. Carbajal, R. C. Aguilera, E. J. Sandouk, M. Aono,
A. Z. Stieg, and J. K. Gimzewski
A List of Papers Related to the Atomic Switch
265