28. “A solid electrolyte nanometer switch”
T. Sakamoto, S. Kaeriyama, M. Mizuno, H. Kawaura, T. Hasegawa,
K. Terabe, and M. Aono
Electrical Engineering in Japan 165 (2008) 68–73.
DOI: 10.1002/eej.20542
29. “Diffusivity of Cu ions in solid electrolyte and its effect on the performance of
nanometer-scale switch”
N. Banno, T. Sakamoto, N. Iguchi, H. Sunamura, K. Terabe, T. Nakayama,
and M. Aono
IEEE Transaction on Electron Devices 55 (2008) 3283–3287.
DOI: 10.1109/TED.2008.2004246
30. “On-state reliability of solid-electrolyte switch”
N. Banno, T. Sakamoto, S. Fujieda, and M. Aono
2008 IEEE International Reliability Physics Symposium, 707–708.
DOI: 10.1109/RELPHY.2008.4558999
31. “Excess-silver-induced bridge formation in a silver sulfide atomic switch”
Z. Wang, T. Gu, T. Tada, and S. Watanabe
Applied Physics Letters 93 (2008) 152106.
DOI: 10.1063/1.2963197
2009
32. “Nanoionics switching devices: Atomic switches
T. Hasegawa, K. Terabe, T. Sakamoto, and M. Aono
MRS Bulletin 34 (2009) 929–934.
DOI: 10.1557/mrs2009.215
33. “Nonvolatile solid-electrolyte switch embedded into Cu interconnect”
T. Sakamoto, M. Tada, N. Banno, Y. Tsuji, Y. Saitoh, Y. Yabe, H. Hada,
N. Iguchi, and M. Aono
2009 Symposium on VLSI Technology, 130–131.
34. “Cu-ion diffusivity in SiO 2 -Ta 2 O 5 solid electrolyte and its impact of the yield of
resistance switching after BEOL processes”
N. Banno, T. Sakamoto, H. Hada, N. Kasai, N. Iguchi, S. Fujieda,
T. Ichihashi, T. Hasegawa, and M. Aono
2009 IEEE International Reliability Physics Symposium, 359–399.
DOI: 10.1109/IRPS.2009.5173285
35. “Highly scalable nonvolatile TiO x /TaSiO y solid-electrolyte crossbar switch
integrated in local interconnect for low power reconfigurable logic”
M. Tada, T. Sakamoto, Y. Tsuji, N. Banno, Y. Saitoh, Y. Yabe, S. Ishida,
M. Terai, S. Kotsuji, N. Iguchi, M. Aono, H. Hada, and N. Kasai
2009 IEEE International Electron Device Meeting, 1–4.
DOI: 10.1109/IEDM.2009.5424287
36. “First-principles simulations on bulk Ta 2 O 5 and Cu/Ta 2 O 5 /Pt heterojunction:
Electronic structures and transport properties”
T. Gu, Z. Wang, T. Tada, and S. Watanabe
Journal of Applied Physics 106 (2009) 103713.
DOI: 10.1063/1.3260244
A List of Papers Related to the Atomic Switch
249
T. Sakamoto, S. Kaeriyama, M. Mizuno, H. Kawaura, T. Hasegawa,
K. Terabe, and M. Aono
Electrical Engineering in Japan 165 (2008) 68–73.
DOI: 10.1002/eej.20542
29. “Diffusivity of Cu ions in solid electrolyte and its effect on the performance of
nanometer-scale switch”
N. Banno, T. Sakamoto, N. Iguchi, H. Sunamura, K. Terabe, T. Nakayama,
and M. Aono
IEEE Transaction on Electron Devices 55 (2008) 3283–3287.
DOI: 10.1109/TED.2008.2004246
30. “On-state reliability of solid-electrolyte switch”
N. Banno, T. Sakamoto, S. Fujieda, and M. Aono
2008 IEEE International Reliability Physics Symposium, 707–708.
DOI: 10.1109/RELPHY.2008.4558999
31. “Excess-silver-induced bridge formation in a silver sulfide atomic switch”
Z. Wang, T. Gu, T. Tada, and S. Watanabe
Applied Physics Letters 93 (2008) 152106.
DOI: 10.1063/1.2963197
2009
32. “Nanoionics switching devices: Atomic switches
T. Hasegawa, K. Terabe, T. Sakamoto, and M. Aono
MRS Bulletin 34 (2009) 929–934.
DOI: 10.1557/mrs2009.215
33. “Nonvolatile solid-electrolyte switch embedded into Cu interconnect”
T. Sakamoto, M. Tada, N. Banno, Y. Tsuji, Y. Saitoh, Y. Yabe, H. Hada,
N. Iguchi, and M. Aono
2009 Symposium on VLSI Technology, 130–131.
34. “Cu-ion diffusivity in SiO 2 -Ta 2 O 5 solid electrolyte and its impact of the yield of
resistance switching after BEOL processes”
N. Banno, T. Sakamoto, H. Hada, N. Kasai, N. Iguchi, S. Fujieda,
T. Ichihashi, T. Hasegawa, and M. Aono
2009 IEEE International Reliability Physics Symposium, 359–399.
DOI: 10.1109/IRPS.2009.5173285
35. “Highly scalable nonvolatile TiO x /TaSiO y solid-electrolyte crossbar switch
integrated in local interconnect for low power reconfigurable logic”
M. Tada, T. Sakamoto, Y. Tsuji, N. Banno, Y. Saitoh, Y. Yabe, S. Ishida,
M. Terai, S. Kotsuji, N. Iguchi, M. Aono, H. Hada, and N. Kasai
2009 IEEE International Electron Device Meeting, 1–4.
DOI: 10.1109/IEDM.2009.5424287
36. “First-principles simulations on bulk Ta 2 O 5 and Cu/Ta 2 O 5 /Pt heterojunction:
Electronic structures and transport properties”
T. Gu, Z. Wang, T. Tada, and S. Watanabe
Journal of Applied Physics 106 (2009) 103713.
DOI: 10.1063/1.3260244
A List of Papers Related to the Atomic Switch
249