Nanoionic Devices for Physical Property
Tuning and Enhancement
Takashi Tsuchiya, Kazuya Terabe, and Masakazu Aono
Abstract Nanoionic devices for physical property tuning and enhancement have
been developed to generate novel functions overcoming limitations of conventional
materials synthesis and semiconductor technology. Local ionic transport near the
solid/solid interface enabled in-situ tuning and enhancement of various physical
properties. Two electronic carrier doping methods can be used to achieve extremely
high-density electronic carriers: one is electrochemical carrier doping using a redox
reaction; the other is electrostatic carrier doping using an electric double layer
(EDL). Optical bandgap and photoluminescence are tuned for various applications
including smart windows and biosensors. Magnetization and magnetoresistance are
tuned for low-power-consumption magnetic storage devices. Superconducting transition temperature is enhanced for exploring high temperature superconductivity.
Nanoionic devices for physical property tuning and enhancement are promising
derivative of atomic switch technology.
1 Introduction
Nanoionic devices are functional devices achieved by ionic transport and the
resultant electrochemical processes in nanoscale including inside of solid, surface
of solid, or solid/solid interface [1–24]. The concept of nanoionic devices originated
from an invention of quantized conductance atomic switch by Terabe et al.
[1, 2]. Early history of nanoionic devices research, which was mainly dedicated to
development of atomic switch, is described elsewhere. For the atomic switch,
electrochemical processes are used to achieve generation and annihilation of metallic
nanofilament, resulting in the nonvolatile and quantized conductance switching.
However, electrochemical processes can differently function in the vicinity of
solid electrolyte/electronic materials, whose physical properties are strongly
T. Tsuchiya (*) · K. Terabe · M. Aono
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials
Science (NIMS), Tsukuba, Ibaraki, Japan
e-mail: TSUCHIYA.Takashi@nims.go.jp
© Springer Nature Switzerland AG 2020
M. Aono (ed.), Atomic Switch, Advances in Atom and Single Molecule Machines,
https://doi.org/10.1007/978-3-030-34875-5_9
161
Tuning and Enhancement
Takashi Tsuchiya, Kazuya Terabe, and Masakazu Aono
Abstract Nanoionic devices for physical property tuning and enhancement have
been developed to generate novel functions overcoming limitations of conventional
materials synthesis and semiconductor technology. Local ionic transport near the
solid/solid interface enabled in-situ tuning and enhancement of various physical
properties. Two electronic carrier doping methods can be used to achieve extremely
high-density electronic carriers: one is electrochemical carrier doping using a redox
reaction; the other is electrostatic carrier doping using an electric double layer
(EDL). Optical bandgap and photoluminescence are tuned for various applications
including smart windows and biosensors. Magnetization and magnetoresistance are
tuned for low-power-consumption magnetic storage devices. Superconducting transition temperature is enhanced for exploring high temperature superconductivity.
Nanoionic devices for physical property tuning and enhancement are promising
derivative of atomic switch technology.
1 Introduction
Nanoionic devices are functional devices achieved by ionic transport and the
resultant electrochemical processes in nanoscale including inside of solid, surface
of solid, or solid/solid interface [1–24]. The concept of nanoionic devices originated
from an invention of quantized conductance atomic switch by Terabe et al.
[1, 2]. Early history of nanoionic devices research, which was mainly dedicated to
development of atomic switch, is described elsewhere. For the atomic switch,
electrochemical processes are used to achieve generation and annihilation of metallic
nanofilament, resulting in the nonvolatile and quantized conductance switching.
However, electrochemical processes can differently function in the vicinity of
solid electrolyte/electronic materials, whose physical properties are strongly
T. Tsuchiya (*) · K. Terabe · M. Aono
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials
Science (NIMS), Tsukuba, Ibaraki, Japan
e-mail: TSUCHIYA.Takashi@nims.go.jp
© Springer Nature Switzerland AG 2020
M. Aono (ed.), Atomic Switch, Advances in Atom and Single Molecule Machines,
https://doi.org/10.1007/978-3-030-34875-5_9
161