substrate using a SPE solution drop-on-demand IJP technique, and to demonstrate
stable resistive switching behavior under substrate bending. The SPE-based atomic
switch shows promise for the development not only of flexible switch/memory
devices but also of new types of atomic-scale devices with high-speed operation
and ultra-low power consumption.
Acknowledgments We would like to thank to our collaborators, T. Hasegawa, K. Terabe, J. P.
Hill, K. Ariga, M. Muruganathan, and H. Mizuta.
References
1. Scott, J.C., Bozano, L.D.: Nonvolatile memory elements based on organic materials. Adv.
Mater. 19, 1452 (2007)
2. Altebaeumer, T., Gotsmann, B., Pozidis, H., Knoll, A., Duerig, U.: Nanoscale shape-memory
function in highly cross-liked polymers. Nano Lett. 8, 4398 (2008)
3. Ling, Q.D., Liaw, D.J., Zhu, C., Chen, D.S., Kang, E., Neoh, K.: Polymer electronic memories:
materials, devices and mechanisms. Prog. Polym. Sci. 33, 917 (2008)
Fig. 11 Switching properties of an IJP-based Ag/Ag-PEO/Pt device under substrate bending. (a)
Variation in the on and off resistances and (b) the turn-on and turn-off voltages. (c) and (d) Show
the retention properties with respect to sweeping and bending cycles. Copyright 2012, Cambridge
University Press
Solid-Polymer-Electrolyte-Based Atomic Switches
157
stable resistive switching behavior under substrate bending. The SPE-based atomic
switch shows promise for the development not only of flexible switch/memory
devices but also of new types of atomic-scale devices with high-speed operation
and ultra-low power consumption.
Acknowledgments We would like to thank to our collaborators, T. Hasegawa, K. Terabe, J. P.
Hill, K. Ariga, M. Muruganathan, and H. Mizuta.
References
1. Scott, J.C., Bozano, L.D.: Nonvolatile memory elements based on organic materials. Adv.
Mater. 19, 1452 (2007)
2. Altebaeumer, T., Gotsmann, B., Pozidis, H., Knoll, A., Duerig, U.: Nanoscale shape-memory
function in highly cross-liked polymers. Nano Lett. 8, 4398 (2008)
3. Ling, Q.D., Liaw, D.J., Zhu, C., Chen, D.S., Kang, E., Neoh, K.: Polymer electronic memories:
materials, devices and mechanisms. Prog. Polym. Sci. 33, 917 (2008)
Fig. 11 Switching properties of an IJP-based Ag/Ag-PEO/Pt device under substrate bending. (a)
Variation in the on and off resistances and (b) the turn-on and turn-off voltages. (c) and (d) Show
the retention properties with respect to sweeping and bending cycles. Copyright 2012, Cambridge
University Press
Solid-Polymer-Electrolyte-Based Atomic Switches
157