was decreased by half after the electrical operations [37]. On the basis of these
results, we conclude that the formation of Ta-Ta bonds, but not V O s, is responsible
for the LRS in a-TaO x based resistive switch.
Fig. 14 Changes of Ta-O/Ta-Ta bond lengths and Ta(O)/O(Ta) CNs dependent on x value in
a-TaO x . Adapted from Ref. [7] with permission from The Royal Society of Chemistry
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results, we conclude that the formation of Ta-Ta bonds, but not V O s, is responsible
for the LRS in a-TaO x based resistive switch.
Fig. 14 Changes of Ta-O/Ta-Ta bond lengths and Ta(O)/O(Ta) CNs dependent on x value in
a-TaO x . Adapted from Ref. [7] with permission from The Royal Society of Chemistry
114
S. Watanabe and B. Xiao