interface of Cu/a-Ta 2 O 5 , and the ionization behavior becomes more obvious as the
interface O content and/or temperature increases.
4 Switching Mechanism of Pt/a-TaO x /Pt Resistive Switch
4.1 Conduction Path in Pt/a-TaO x /Pt Resistive Switch
So far, a-TaO x (x < 2.5) based resistive switches (i.e., Pt/TaO 2.5-x /TaO 2-x /Pt) have
been extensively studied in the literature and shown superior performance to other
Fig. 11 Density of States of Pt/c-Ta 2 O 5 /Pt with various interface O contents
Atomistic Simulations for Understanding Microscopic Mechanism of. . .
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