154
2 Holographic Microscopy of Phase and Diffuse Objects …
Fig. 2.46 Dependence of deformation quantity δ on the period of time from the moment of switching
on the pumping current. Reprinted from [136] with permission
δ = x d +
l sd
l m
x m
(2.49)
The deformation value of the injection heterolasers under different conditions of
continuous current pump was measured. The images of resonator mirrors obtained
under different excitation levels of the heterolaser [55] were recovered from the
holograms and the holographic interferograms. As it is seen, the deformations are
not localized only in the boundaries of the active layer and spread over the whole
diode edge. Temporary deformation dependencies of resonator mirror edges of the
semiconductor diode R-7 in the area of the active layer are given as an example in
Fig. 2.46. After switching on the current, the deformation value δ begins to increase
and reaches the maximum in the moment of steady-state thermal conditions. For
studying the diode and the kind of the heat sink applied, the output in the steadystate conditions took 10–15 min that corresponds to the alterations of the power
generation S r and the temperature of the copper holder T over this period of time
(see Fig. 2.46b).
The data make it possible to estimate the mechanical stress occurring during the
work of the diode with different holders and levels of continuous current pump. The
dependence of power characteristics was studied as well as the service life of the
heterolasers on the resonator deformations values. The suggested methods of deformation definition of semiconductor crystals can be used for resource prognostication
of injection heterolasers.
Two-channel holographic interferometry in the study of semiconductor laser
diodes [67]. In the works [58, 63], the holographic interference microscopy method
was implemented in real time to find thermoelastic deformations and connected with
them mechanical stresses in the semiconductor crystals of the injection lasers. While
conducting such measurements, it is important to consider carefully the mechanical
characteristics of the solder and the thermal deformations of the cooling vessel. One
2 Holographic Microscopy of Phase and Diffuse Objects …
Fig. 2.46 Dependence of deformation quantity δ on the period of time from the moment of switching
on the pumping current. Reprinted from [136] with permission
δ = x d +
l sd
l m
x m
(2.49)
The deformation value of the injection heterolasers under different conditions of
continuous current pump was measured. The images of resonator mirrors obtained
under different excitation levels of the heterolaser [55] were recovered from the
holograms and the holographic interferograms. As it is seen, the deformations are
not localized only in the boundaries of the active layer and spread over the whole
diode edge. Temporary deformation dependencies of resonator mirror edges of the
semiconductor diode R-7 in the area of the active layer are given as an example in
Fig. 2.46. After switching on the current, the deformation value δ begins to increase
and reaches the maximum in the moment of steady-state thermal conditions. For
studying the diode and the kind of the heat sink applied, the output in the steadystate conditions took 10–15 min that corresponds to the alterations of the power
generation S r and the temperature of the copper holder T over this period of time
(see Fig. 2.46b).
The data make it possible to estimate the mechanical stress occurring during the
work of the diode with different holders and levels of continuous current pump. The
dependence of power characteristics was studied as well as the service life of the
heterolasers on the resonator deformations values. The suggested methods of deformation definition of semiconductor crystals can be used for resource prognostication
of injection heterolasers.
Two-channel holographic interferometry in the study of semiconductor laser
diodes [67]. In the works [58, 63], the holographic interference microscopy method
was implemented in real time to find thermoelastic deformations and connected with
them mechanical stresses in the semiconductor crystals of the injection lasers. While
conducting such measurements, it is important to consider carefully the mechanical
characteristics of the solder and the thermal deformations of the cooling vessel. One