56
2 Entering a Two-Dimensional Materials World
222. P. Rivera, J.R. Schaibley, A.M. Jones, J.S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G.
Clark, N.J. Ghimire, J. Yan, D.G. Mandrus, W. Yao, X. Xu, Observation of long-lived interlayer
excitons in monolayer MoSe 2 -WSe 2 heterostructures. Nat. Commun. 6, 6242 (2015)
223. H.M. Hill, A.F. Rigosi, K.T. Rim, G.W. Flynn, T.F. Heinz, Band alignment in MoS 2 /WS 2
transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy
and spectroscopy. Nano Lett. 16, 4831–4837 (2016)
224. J.R. Schaibley, P. Rivera, H. Yu, K.L. Seyler, J. Yan, D.G. Mandrus, T. Taniguchi, K. Watanabe,
W. Yao, X. Xu, Directional interlayer spin-valley transfer in two-dimensional heterostructures.
Nat. Commun. 7, 13747 (2016)
225. J.S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D.
Mandrus, D. Cobden, W. Yao, X. Xu, Interlayer exciton optoelectronics in a 2D heterostructure
p-n junction. Nano Lett. 17, 638–643 (2017)
226. P. Rivera, K.L. Seyler, H. Yu, J.R. Schaibley, J. Yan, D.G. Mandrus, W. Yao, X. Xu, Valleypolarized exciton dynamics in a 2D semiconductor heterostructure. Science 351, 688–691
(2016)
227. D. Unuchek, A. Ciarrocchi, A. Avsar, K. Watanabe, T. Taniguchi, A. Kis, Room-temperature
electrical control of exciton flux in a van der Waals heterostructure. Nature 560, 340–344
(2018)
228. M. Shah, L.M. Schneider, A. Rahimi-Iman, Observation of intralayer and interlayer excitons in
monolayered WSe 2 /WS 2 heterostructure. Semiconductors 53(16), 2140–2146 (2019). https://
doi.org/10.1134/S1063782619120273
229. X. Zhou, N. Zhou, C. Li, H. Song, Q. Zhang, X. Hu, L. Gan, H. Li, J. Lü, J. Luo, J. Xiong,
T. Zhai, Vertical heterostructures based on SnSe 2 /MoS 2 for high performance photodetectors.
2D Mater. 4, 025048 (2017)
230. H. Xue, Y. Dai, W. Kim, Y. Wang, X. Bai, M. Qi, K. Halonen, H. Lipsanen, Z. Sun, High
photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. Nanoscale 11(7), 3240–3247 (2019)
231. M.M. Furchi, A. Pospischil, F. Libisch, J. Burgdörfer, T. Mueller, Photovoltaic effect in an
electrically tunable van der Waals heterojunction. Nano Lett. 14, 4785–4791 (2014)
232. M. Ye, D. Zhang, Y.K. Yap, Recent advances in electronic and optoelectronic devices based
on two-dimensional transition metal dichalcogenides. Electron. 6(2), 43 (2017)
233. R. Ribeiro-Palau, C. Zhang, K. Watanabe, T. Taniguchi, J. Hone, C.R. Dean, Twistable electronics with dynamically rotatable heterostructures. Science 361, 690–693 (2018)
234. E.V. Calman, M.M. Fogler, L.V. Butov, S. Hu, A. Mishchenko, A.K. Geim, Indirect excitons
in van der Waals heterostructures at room temperature. Nat. Commun. 9, 1895 (2018)
235. X. Wang, Y. Gong, G. Shi, W.L. Chow, K. Keyshar, G. Ye, R. Vajtai, J. Lou, Z. Liu, E. Ringe,
B.K. Tay, P.M. Ajayan, Chemical vapor deposition growth of crystalline monolayer MoSe 2 .
ACS Nano 8, 5125–5131 (2014)
236. H. Fang, C. Battaglia, C. Carraro, S. Nemsak, B. Ozdol, J.S. Kang, H.A. Bechtel, S.B. Desai,
F. Kronast, A.A. Unal, G. Conti, C. Conlon, G.K. Palsson, M.C. Martin, A.M. Minor, C.S.
Fadley, E. Yablonovitch, R. Maboudian, A. Javey, Strong interlayer coupling in van der Waals
heterostructures built from single-layer chalcogenides. Proc. Natl. Acad. Sci. 111, 6198–6202
(2014)
237. S. Tongay, J. Zhou, C. Ataca, K. Lo, T.S. Matthews, J. Li, J.C. Grossman, J. Wu, Thermally
driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe 2 versus
MoS 2 . Nano Lett. 12, 5576–5580 (2012)
238. I.G. Lezama, A. Arora, A. Ubaldini, C. Barreteau, E. Giannini, M. Potemski, A.F. Morpurgo,
Indirect-to-direct band gap crossover in few-layer MoTe 2 . Nano Lett. 15, 2336–2342 (2015)
239. Y. Liu, N.O. Weiss, X. Duan, H.-C. Cheng, Y. Huang, X. Duan, Van der Waals heterostructures
and devices. Nat. Rev. Mater. 1, 16042 (2016)
240. Q. Zhao, T. Wang, Y. Miao, F. Ma, Y. Xie, X. Ma, Y. Gu, J. Li, J. He, B. Chen, S. Xi, L. Xu,
H. Zhen, Z. Yin, J. Li, J. Ren, W. Jie, Thickness-induced structural phase transformation of
layered gallium telluride. Phys. Chem. Chem. Phys. 18(28), 18719–18726 (2016)
2 Entering a Two-Dimensional Materials World
222. P. Rivera, J.R. Schaibley, A.M. Jones, J.S. Ross, S. Wu, G. Aivazian, P. Klement, K. Seyler, G.
Clark, N.J. Ghimire, J. Yan, D.G. Mandrus, W. Yao, X. Xu, Observation of long-lived interlayer
excitons in monolayer MoSe 2 -WSe 2 heterostructures. Nat. Commun. 6, 6242 (2015)
223. H.M. Hill, A.F. Rigosi, K.T. Rim, G.W. Flynn, T.F. Heinz, Band alignment in MoS 2 /WS 2
transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy
and spectroscopy. Nano Lett. 16, 4831–4837 (2016)
224. J.R. Schaibley, P. Rivera, H. Yu, K.L. Seyler, J. Yan, D.G. Mandrus, T. Taniguchi, K. Watanabe,
W. Yao, X. Xu, Directional interlayer spin-valley transfer in two-dimensional heterostructures.
Nat. Commun. 7, 13747 (2016)
225. J.S. Ross, P. Rivera, J. Schaibley, E. Lee-Wong, H. Yu, T. Taniguchi, K. Watanabe, J. Yan, D.
Mandrus, D. Cobden, W. Yao, X. Xu, Interlayer exciton optoelectronics in a 2D heterostructure
p-n junction. Nano Lett. 17, 638–643 (2017)
226. P. Rivera, K.L. Seyler, H. Yu, J.R. Schaibley, J. Yan, D.G. Mandrus, W. Yao, X. Xu, Valleypolarized exciton dynamics in a 2D semiconductor heterostructure. Science 351, 688–691
(2016)
227. D. Unuchek, A. Ciarrocchi, A. Avsar, K. Watanabe, T. Taniguchi, A. Kis, Room-temperature
electrical control of exciton flux in a van der Waals heterostructure. Nature 560, 340–344
(2018)
228. M. Shah, L.M. Schneider, A. Rahimi-Iman, Observation of intralayer and interlayer excitons in
monolayered WSe 2 /WS 2 heterostructure. Semiconductors 53(16), 2140–2146 (2019). https://
doi.org/10.1134/S1063782619120273
229. X. Zhou, N. Zhou, C. Li, H. Song, Q. Zhang, X. Hu, L. Gan, H. Li, J. Lü, J. Luo, J. Xiong,
T. Zhai, Vertical heterostructures based on SnSe 2 /MoS 2 for high performance photodetectors.
2D Mater. 4, 025048 (2017)
230. H. Xue, Y. Dai, W. Kim, Y. Wang, X. Bai, M. Qi, K. Halonen, H. Lipsanen, Z. Sun, High
photoresponsivity and broadband photodetection with a band-engineered WSe 2 /SnSe 2 heterostructure. Nanoscale 11(7), 3240–3247 (2019)
231. M.M. Furchi, A. Pospischil, F. Libisch, J. Burgdörfer, T. Mueller, Photovoltaic effect in an
electrically tunable van der Waals heterojunction. Nano Lett. 14, 4785–4791 (2014)
232. M. Ye, D. Zhang, Y.K. Yap, Recent advances in electronic and optoelectronic devices based
on two-dimensional transition metal dichalcogenides. Electron. 6(2), 43 (2017)
233. R. Ribeiro-Palau, C. Zhang, K. Watanabe, T. Taniguchi, J. Hone, C.R. Dean, Twistable electronics with dynamically rotatable heterostructures. Science 361, 690–693 (2018)
234. E.V. Calman, M.M. Fogler, L.V. Butov, S. Hu, A. Mishchenko, A.K. Geim, Indirect excitons
in van der Waals heterostructures at room temperature. Nat. Commun. 9, 1895 (2018)
235. X. Wang, Y. Gong, G. Shi, W.L. Chow, K. Keyshar, G. Ye, R. Vajtai, J. Lou, Z. Liu, E. Ringe,
B.K. Tay, P.M. Ajayan, Chemical vapor deposition growth of crystalline monolayer MoSe 2 .
ACS Nano 8, 5125–5131 (2014)
236. H. Fang, C. Battaglia, C. Carraro, S. Nemsak, B. Ozdol, J.S. Kang, H.A. Bechtel, S.B. Desai,
F. Kronast, A.A. Unal, G. Conti, C. Conlon, G.K. Palsson, M.C. Martin, A.M. Minor, C.S.
Fadley, E. Yablonovitch, R. Maboudian, A. Javey, Strong interlayer coupling in van der Waals
heterostructures built from single-layer chalcogenides. Proc. Natl. Acad. Sci. 111, 6198–6202
(2014)
237. S. Tongay, J. Zhou, C. Ataca, K. Lo, T.S. Matthews, J. Li, J.C. Grossman, J. Wu, Thermally
driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe 2 versus
MoS 2 . Nano Lett. 12, 5576–5580 (2012)
238. I.G. Lezama, A. Arora, A. Ubaldini, C. Barreteau, E. Giannini, M. Potemski, A.F. Morpurgo,
Indirect-to-direct band gap crossover in few-layer MoTe 2 . Nano Lett. 15, 2336–2342 (2015)
239. Y. Liu, N.O. Weiss, X. Duan, H.-C. Cheng, Y. Huang, X. Duan, Van der Waals heterostructures
and devices. Nat. Rev. Mater. 1, 16042 (2016)
240. Q. Zhao, T. Wang, Y. Miao, F. Ma, Y. Xie, X. Ma, Y. Gu, J. Li, J. He, B. Chen, S. Xi, L. Xu,
H. Zhen, Z. Yin, J. Li, J. Ren, W. Jie, Thickness-induced structural phase transformation of
layered gallium telluride. Phys. Chem. Chem. Phys. 18(28), 18719–18726 (2016)