References
51
124. P. Gupta, A.A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov,
S. Vishwanath, V. Protasenko, M.R. Laskar, H.G. Xing, D. Jena, A. Bhattacharya, Layered
transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.
Sci. Rep. 6, 1–8 (2016). https://doi.org/10.1038/srep23708
125. T. Ohta, A. Bostwick, T. Seyller, K. Horn, E. Rotenberg, Controlling the electronic structure
of bilayer graphene. Science 313, 951 (2006)
126. E.V. Castro, K.S. Novoselov, S.V. Morozov, N.M.R. Peres, J.M.B.L. dos Santos, J. Nilsson, F.
Guinea, A.K. Geim, A.H.C. Neto, Biased bilayer graphene: semiconductor with a gap tunable
by the electric field effect. Phys. Rev. Lett. 99, 216802 (2007)
127. J.B. Oostinga, H.B. Heersche, X. Liu, A.F. Morpurgo, L.M.K. Vandersypen, Gate-induced
insulating state in bilayer graphene devices. Nat. Mater. 7, 151–157 (2008)
128. A.B. Kuzmenko, E. van Heumen, D. van der Marel, P. Lerch, P. Blake, K.S. Novoselov, A.K.
Geim, Infrared spectroscopy of electronic bands in bilayer graphene. Phys. Rev. B 79, 115441
(2009)
129. R. Fivaz, E. Mooser, Electron-phonon interaction in semiconducting layer structures. Phys.
Rev. 136, A833–A836 (1964)
130. J.A. Wilson, A.D. Yoffe, The transition metal dichalcogenides discussion and interpretation
of the observed optical, electrical and structural properties. Adv. Phys. 18, 193–335 (1969)
131. R.L. Withers, J.A. Wilson, An examination of the formation and characteristics of chargedensity waves in inorganic materials with special reference to the two- and one-dimensional
transition-metal chalcogenides. J. Phys. C: Solid State Phys. 19, 4809–4845 (1986)
132. T. Shishidou, A.J. Freeman, R. Asahi, Effect of GGA on the half-metallicity of the itinerant
ferromagnet CoS 2 . Phys. Rev. B 64, 180401 (2001)
133. J.T. Ye, Y.J. Zhang, R. Akashi, M.S. Bahramy, R. Arita, Y. Iwasa, Superconducting dome in
a gate-tuned band insulator. Science 338, 1193 (2012)
134. N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P.M. Ajayan, J. Lou, H. Zhao, Second harmonic
microscopy of monolayer MoS 2 . Phys. Rev. B 87, 161403 (2013)
135. A.R. Beal, W.Y. Liang, Excitons in 2H-WSe 2 and 3R-WS 2 . J. Phys. C Solid State Phys. 9,
2459–2466 (1976)
136. H. Meinhold, G. Weiser, Modulation spectroscopy on MoS 2 , and MoSe 2 . Phys. Status Solidi
B 73(1), 105–115 (1976)
137. D.G. Mead, J.C. Irwin, Long wavelength optic phonons in WSe 2 . Can. J. Phys. 55, 379–382
(1977)
138. R.A. Taylor, J.F. Rayn, Time-resolved exciton photoluminescence in GaSe and GaTe. J. Phys.
C: Solid State Phys. 20, 6175–6187 (1987)
139. K.K. Kam, B.A. Parkinson, Detailed photocurrent spectroscopy of the semiconducting group
VIB transition metal dichalcogenides. J. Phys. Chem. 86, 463–467 (1982)
140. L. Banszerus, M. Schmitz, S. Engels, J. Dauber, M. Oellers, F. Haupt, K. Watanabe, T.
Taniguchi, B. Beschoten, C. Stampfer, Ultrahigh-mobility graphene devices from chemical
vapor deposition on reusable copper. Sci. Adv. 1, e1500222 (2015)
141. A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H.S.J. van der Zant,
G.A. Steele, Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater. 1, 011002 (2014)
142. D. Edelberg, D. Rhodes, A. Kerelsky, B. Kim, J. Wang, A. Zangiabadi, C. Kim, A. Abhinandan,
J. Ardelean, M. Scully, D. Scullion, L. Embon, R. Zu, E.J.G. Santos, L. Balicas, C. Marianetti,
K. Barmak, X. Zhu, J. Hone, A.N. Pasupathy, Approaching the intrinsic limit in transition
metal diselenides via point defect control. Nano Lett. 19, 4371–4379 (2019)
143. A. Raja, A. Chaves, J. Yu, G. Arefe, H.M. Hill, A.F. Rigosi, T.C. Berkelbach, P. Nagler, C.
Schüller, T. Korn, C. Nuckolls, J. Hone, L.E. Brus, T.F. Heinz, D.R. Reichman, A. Chernikov,
Coulomb engineering of the bandgap and excitons in two-dimensional materials. Nat. Commun. 8, 15251 (2017)
144. Y. Lin, X. Ling, L. Yu, S. Huang, A.L. Hsu, Y.-H. Lee, J. Kong, M.S. Dresselhaus, T. Palacios,
Dielectric screening of excitons and trions in single-layer MoS 2 . Nano Lett. 14, 5569–5576
(2014)
51
124. P. Gupta, A.A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov,
S. Vishwanath, V. Protasenko, M.R. Laskar, H.G. Xing, D. Jena, A. Bhattacharya, Layered
transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.
Sci. Rep. 6, 1–8 (2016). https://doi.org/10.1038/srep23708
125. T. Ohta, A. Bostwick, T. Seyller, K. Horn, E. Rotenberg, Controlling the electronic structure
of bilayer graphene. Science 313, 951 (2006)
126. E.V. Castro, K.S. Novoselov, S.V. Morozov, N.M.R. Peres, J.M.B.L. dos Santos, J. Nilsson, F.
Guinea, A.K. Geim, A.H.C. Neto, Biased bilayer graphene: semiconductor with a gap tunable
by the electric field effect. Phys. Rev. Lett. 99, 216802 (2007)
127. J.B. Oostinga, H.B. Heersche, X. Liu, A.F. Morpurgo, L.M.K. Vandersypen, Gate-induced
insulating state in bilayer graphene devices. Nat. Mater. 7, 151–157 (2008)
128. A.B. Kuzmenko, E. van Heumen, D. van der Marel, P. Lerch, P. Blake, K.S. Novoselov, A.K.
Geim, Infrared spectroscopy of electronic bands in bilayer graphene. Phys. Rev. B 79, 115441
(2009)
129. R. Fivaz, E. Mooser, Electron-phonon interaction in semiconducting layer structures. Phys.
Rev. 136, A833–A836 (1964)
130. J.A. Wilson, A.D. Yoffe, The transition metal dichalcogenides discussion and interpretation
of the observed optical, electrical and structural properties. Adv. Phys. 18, 193–335 (1969)
131. R.L. Withers, J.A. Wilson, An examination of the formation and characteristics of chargedensity waves in inorganic materials with special reference to the two- and one-dimensional
transition-metal chalcogenides. J. Phys. C: Solid State Phys. 19, 4809–4845 (1986)
132. T. Shishidou, A.J. Freeman, R. Asahi, Effect of GGA on the half-metallicity of the itinerant
ferromagnet CoS 2 . Phys. Rev. B 64, 180401 (2001)
133. J.T. Ye, Y.J. Zhang, R. Akashi, M.S. Bahramy, R. Arita, Y. Iwasa, Superconducting dome in
a gate-tuned band insulator. Science 338, 1193 (2012)
134. N. Kumar, S. Najmaei, Q. Cui, F. Ceballos, P.M. Ajayan, J. Lou, H. Zhao, Second harmonic
microscopy of monolayer MoS 2 . Phys. Rev. B 87, 161403 (2013)
135. A.R. Beal, W.Y. Liang, Excitons in 2H-WSe 2 and 3R-WS 2 . J. Phys. C Solid State Phys. 9,
2459–2466 (1976)
136. H. Meinhold, G. Weiser, Modulation spectroscopy on MoS 2 , and MoSe 2 . Phys. Status Solidi
B 73(1), 105–115 (1976)
137. D.G. Mead, J.C. Irwin, Long wavelength optic phonons in WSe 2 . Can. J. Phys. 55, 379–382
(1977)
138. R.A. Taylor, J.F. Rayn, Time-resolved exciton photoluminescence in GaSe and GaTe. J. Phys.
C: Solid State Phys. 20, 6175–6187 (1987)
139. K.K. Kam, B.A. Parkinson, Detailed photocurrent spectroscopy of the semiconducting group
VIB transition metal dichalcogenides. J. Phys. Chem. 86, 463–467 (1982)
140. L. Banszerus, M. Schmitz, S. Engels, J. Dauber, M. Oellers, F. Haupt, K. Watanabe, T.
Taniguchi, B. Beschoten, C. Stampfer, Ultrahigh-mobility graphene devices from chemical
vapor deposition on reusable copper. Sci. Adv. 1, e1500222 (2015)
141. A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H.S.J. van der Zant,
G.A. Steele, Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater. 1, 011002 (2014)
142. D. Edelberg, D. Rhodes, A. Kerelsky, B. Kim, J. Wang, A. Zangiabadi, C. Kim, A. Abhinandan,
J. Ardelean, M. Scully, D. Scullion, L. Embon, R. Zu, E.J.G. Santos, L. Balicas, C. Marianetti,
K. Barmak, X. Zhu, J. Hone, A.N. Pasupathy, Approaching the intrinsic limit in transition
metal diselenides via point defect control. Nano Lett. 19, 4371–4379 (2019)
143. A. Raja, A. Chaves, J. Yu, G. Arefe, H.M. Hill, A.F. Rigosi, T.C. Berkelbach, P. Nagler, C.
Schüller, T. Korn, C. Nuckolls, J. Hone, L.E. Brus, T.F. Heinz, D.R. Reichman, A. Chernikov,
Coulomb engineering of the bandgap and excitons in two-dimensional materials. Nat. Commun. 8, 15251 (2017)
144. Y. Lin, X. Ling, L. Yu, S. Huang, A.L. Hsu, Y.-H. Lee, J. Kong, M.S. Dresselhaus, T. Palacios,
Dielectric screening of excitons and trions in single-layer MoS 2 . Nano Lett. 14, 5569–5576
(2014)