7.2 Patterning and Assembly
225
tion, i.e. development of resist with a strong spatial selectivity of optical exposure
due to nonlinear absorption. Additionally, milling aspect ratios, precision and speed
strongly depend on the flux, focusing capabilities and the displacement precision,
e.g. that of a computer-controlled translation stage or beam deflection components,
and limits the use of these techniques with respect to sample processing. Nevertheless, these key tools are successfully employed in a wide array of research activities
and enable various exciting studies, some of which are briefly reported in this work.
References
1. R. Dingle, W. Wiegmann, C.H. Henry, Quantum states of confined carriers in very thin
Al x Ga 1−x As-GaAs-Al x Ga 1−x As heterostructures. Phys. Rev. Lett. 33, 827 (1974)
2. M.A. Herman, H. Sitter, Molecular Beam Epitaxy: Fundamentals and Current Status (Springer,
Berlin Heidelberg, 1996)
3. G.B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice (Elsevier Science, 2012)
4. P. Gupta, A.A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov,
S. Vishwanath, V. Protasenko, M.R. Laskar, H.G. Xing, D. Jena, A. Bhattacharya, Layered
transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.
Sci. Rep. 6, 1–8 (2016). https://doi.org/10.1038/srep23708
5. M. Guina, A. Rantamäki, A. Härkönen, Optically pumped vecsels: review of technology and
progress. J. Phys. D: Appl. Phys. 50, 383001 (2017)
6. K.N. Kang, K. Godin, E.-H. Yang, The growth scale and kinetics of WS 2 monolayers under
varying H 2 concentration. Sci. Rep. 5, 13205 (2015). https://doi.org/10.1038/srep13205
7. S. Lippert, L.M. Schneider, D. Renaud, K.N. Kang, O. Ajayi, J. Kuhnert, M.-U. Halbich, O.M.
Abdulmunem, X. Lin, K. Hassoon, S. Edalati-Boostan, Y.D. Kim, W. Heimbrodt, E.-H. Yang,
J.C. Hone, A. Rahimi-Iman, Influence of the substrate material on the optical properties of
tungsten diselenide monolayers. 2D Mater. 4, 025045 (2017). https://doi.org/10.1088/20531583/aa5b21
8. K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, K.S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, B.H.
Hong, Large-scale pattern growth of graphene films for stretchable transparent electrodes.
Nature 457, 706–710 (2009)
9. X. Wang, Y. Gong, G. Shi, W.L. Chow, K. Keyshar, G. Ye, R. Vajtai, J. Lou, Z. Liu, E. Ringe,
B.K. Tay, P.M. Ajayan, Chemical vapor deposition growth of crystalline monolayer MoSe 2 .
ACS Nano 8, 5125–5131 (2014)
10. X. Wang, K. Kang, S. Chen, R. Du, E.-H. Yang, Location-specific growth and transfer of
arrayed MoS 2 monolayers with controllable size. 2D Mater. 4, 025093 (2017)
11. J. Kang, S. Tongay, J. Zhou, J. Li, J. Wu, Band offsets and heterostructures of two-dimensional
semiconductors. Appl. Phys. Lett. 102, 012111 (2013)
12. Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B.I. Yakobson, H.
Terrones, M. Terrones, B.K. Tay, J. Lou, S.T. Pantelides, Z. Liu, W. Zhou, P.M. Ajayan, Vertical
and in-plane heterostructures from WS 2 /MoS 2 monolayers. Nat. Mater. 13, 1135–1142 (2014)
13. D. Jariwala, A.R. Davoyan, J. Wong, H.A. Atwater, Van der Waals materials for atomically-thin
photovoltaics: promise and outlook. ACS Photon. 4, 2962–2970 (2017)
14. L.M. Schneider, J. Kuhnert, S. Schmitt, W. Heimbrodt, U. Huttner, L. Meckbach, T. Stroucken,
S.W. Koch, S. Fu, X. Wang, K. Kang, E.-H. Yang, A. Rahimi-Iman, Spin-layer and spin-valley
locking in CVD-grown AA’- and AB-stacked tungsten-disulfide bilayers. J. Phys. Chem. C
123, 21813–21821 (2019). https://doi.org/10.1021/acs.jpcc.9b07213
15. D. Zhu, H. Shu, F. Jiang, D. Lv, V. Asokan, O. Omar, J. Yuan, Z. Zhang, C. Jin, Capture the
growth kinetics of CVD growth of two-dimensional MoS 2 . npj 2D Mater. Appl. 1, 8 (2017)
225
tion, i.e. development of resist with a strong spatial selectivity of optical exposure
due to nonlinear absorption. Additionally, milling aspect ratios, precision and speed
strongly depend on the flux, focusing capabilities and the displacement precision,
e.g. that of a computer-controlled translation stage or beam deflection components,
and limits the use of these techniques with respect to sample processing. Nevertheless, these key tools are successfully employed in a wide array of research activities
and enable various exciting studies, some of which are briefly reported in this work.
References
1. R. Dingle, W. Wiegmann, C.H. Henry, Quantum states of confined carriers in very thin
Al x Ga 1−x As-GaAs-Al x Ga 1−x As heterostructures. Phys. Rev. Lett. 33, 827 (1974)
2. M.A. Herman, H. Sitter, Molecular Beam Epitaxy: Fundamentals and Current Status (Springer,
Berlin Heidelberg, 1996)
3. G.B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice (Elsevier Science, 2012)
4. P. Gupta, A.A. Rahman, S. Subramanian, S. Gupta, A. Thamizhavel, T. Orlova, S. Rouvimov,
S. Vishwanath, V. Protasenko, M.R. Laskar, H.G. Xing, D. Jena, A. Bhattacharya, Layered
transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth.
Sci. Rep. 6, 1–8 (2016). https://doi.org/10.1038/srep23708
5. M. Guina, A. Rantamäki, A. Härkönen, Optically pumped vecsels: review of technology and
progress. J. Phys. D: Appl. Phys. 50, 383001 (2017)
6. K.N. Kang, K. Godin, E.-H. Yang, The growth scale and kinetics of WS 2 monolayers under
varying H 2 concentration. Sci. Rep. 5, 13205 (2015). https://doi.org/10.1038/srep13205
7. S. Lippert, L.M. Schneider, D. Renaud, K.N. Kang, O. Ajayi, J. Kuhnert, M.-U. Halbich, O.M.
Abdulmunem, X. Lin, K. Hassoon, S. Edalati-Boostan, Y.D. Kim, W. Heimbrodt, E.-H. Yang,
J.C. Hone, A. Rahimi-Iman, Influence of the substrate material on the optical properties of
tungsten diselenide monolayers. 2D Mater. 4, 025045 (2017). https://doi.org/10.1088/20531583/aa5b21
8. K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, K.S. Kim, J.-H. Ahn, P. Kim, J.-Y. Choi, B.H.
Hong, Large-scale pattern growth of graphene films for stretchable transparent electrodes.
Nature 457, 706–710 (2009)
9. X. Wang, Y. Gong, G. Shi, W.L. Chow, K. Keyshar, G. Ye, R. Vajtai, J. Lou, Z. Liu, E. Ringe,
B.K. Tay, P.M. Ajayan, Chemical vapor deposition growth of crystalline monolayer MoSe 2 .
ACS Nano 8, 5125–5131 (2014)
10. X. Wang, K. Kang, S. Chen, R. Du, E.-H. Yang, Location-specific growth and transfer of
arrayed MoS 2 monolayers with controllable size. 2D Mater. 4, 025093 (2017)
11. J. Kang, S. Tongay, J. Zhou, J. Li, J. Wu, Band offsets and heterostructures of two-dimensional
semiconductors. Appl. Phys. Lett. 102, 012111 (2013)
12. Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou, G. Ye, R. Vajtai, B.I. Yakobson, H.
Terrones, M. Terrones, B.K. Tay, J. Lou, S.T. Pantelides, Z. Liu, W. Zhou, P.M. Ajayan, Vertical
and in-plane heterostructures from WS 2 /MoS 2 monolayers. Nat. Mater. 13, 1135–1142 (2014)
13. D. Jariwala, A.R. Davoyan, J. Wong, H.A. Atwater, Van der Waals materials for atomically-thin
photovoltaics: promise and outlook. ACS Photon. 4, 2962–2970 (2017)
14. L.M. Schneider, J. Kuhnert, S. Schmitt, W. Heimbrodt, U. Huttner, L. Meckbach, T. Stroucken,
S.W. Koch, S. Fu, X. Wang, K. Kang, E.-H. Yang, A. Rahimi-Iman, Spin-layer and spin-valley
locking in CVD-grown AA’- and AB-stacked tungsten-disulfide bilayers. J. Phys. Chem. C
123, 21813–21821 (2019). https://doi.org/10.1021/acs.jpcc.9b07213
15. D. Zhu, H. Shu, F. Jiang, D. Lv, V. Asokan, O. Omar, J. Yuan, Z. Zhang, C. Jin, Capture the
growth kinetics of CVD growth of two-dimensional MoS 2 . npj 2D Mater. Appl. 1, 8 (2017)