218
7 Structuring Possibilities
Fig. 7.4 “Golden-GaTe” towards ultra-sensitive detection of aromatic molecules and superior substrates for surface-enhanced Raman spectroscopy. Growth results of gold on the surface of few-layer
GaTe films obtained from differently-timed immersion in HAuCl 4 solution, i.e. for a–i 0, 10, 30,
60, 120, 240, 480, 1920, and 3840 s, respectively [42]. Insets of b–e: Size distribution as well
as the mean diameter of gold nanoparticles. Inset of f: Immersion-time-dependent coverage of Au
nanoparticles on the GaTe films. (a–i) Reproduced with permission. [42] Copyright 2017 American
Chemical Society
exfoliated few-layer 2D GaTe flakes (Fig. 7.4). Therefor, the as-prepared GaTe on
SiO 2 substrate was immersed in a 0.2 mg/mL HAuCl 4 aqueous solution at controlled
temperatures for different periods, before being cleaned and dried for experiments.
While defects are often parasitic, in this case the density of defects in GaTe films was
utilised for a facile decoration of GaTe surfaces with gold nanoparticles. The sizes
and coverage ratios for these nanoparticles on GaTe could be tuned by varying the
immersion time, providing a maximum coverage up to 98% with the help of the Ga
vacancies in the layered GaTe. These golden-GaTe synthesis results were achieved
in the author’s partner group of H.Z. Wu at the Zhejiang University.
Recently, the enhancement of the performance of low-temperature-grown GaAs
(LT-GaAs) THz antennae had been proposed by decorating their surface in the metalantenna gap region with nanoparticles [43]. The 300-nm LT-GaAs on semi-insulating
GaAs substrate, which was grown at a relatively low temperature of 300
◦ C to control the defect types for tailored charge-carrier trapping and recombination rates,
provided the necessary photoexcited charge carriers. These charge carriers can be
7 Structuring Possibilities
Fig. 7.4 “Golden-GaTe” towards ultra-sensitive detection of aromatic molecules and superior substrates for surface-enhanced Raman spectroscopy. Growth results of gold on the surface of few-layer
GaTe films obtained from differently-timed immersion in HAuCl 4 solution, i.e. for a–i 0, 10, 30,
60, 120, 240, 480, 1920, and 3840 s, respectively [42]. Insets of b–e: Size distribution as well
as the mean diameter of gold nanoparticles. Inset of f: Immersion-time-dependent coverage of Au
nanoparticles on the GaTe films. (a–i) Reproduced with permission. [42] Copyright 2017 American
Chemical Society
exfoliated few-layer 2D GaTe flakes (Fig. 7.4). Therefor, the as-prepared GaTe on
SiO 2 substrate was immersed in a 0.2 mg/mL HAuCl 4 aqueous solution at controlled
temperatures for different periods, before being cleaned and dried for experiments.
While defects are often parasitic, in this case the density of defects in GaTe films was
utilised for a facile decoration of GaTe surfaces with gold nanoparticles. The sizes
and coverage ratios for these nanoparticles on GaTe could be tuned by varying the
immersion time, providing a maximum coverage up to 98% with the help of the Ga
vacancies in the layered GaTe. These golden-GaTe synthesis results were achieved
in the author’s partner group of H.Z. Wu at the Zhejiang University.
Recently, the enhancement of the performance of low-temperature-grown GaAs
(LT-GaAs) THz antennae had been proposed by decorating their surface in the metalantenna gap region with nanoparticles [43]. The 300-nm LT-GaAs on semi-insulating
GaAs substrate, which was grown at a relatively low temperature of 300
◦ C to control the defect types for tailored charge-carrier trapping and recombination rates,
provided the necessary photoexcited charge carriers. These charge carriers can be