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6 Effects of Quantisation
74. C. Möller, C. Fuchs, C. Berger, F. Zhang, A. Rahimi-Iman, M. Koch, A.R. Perez, S.W.
Koch, J. Hader, J.V. Moloney, W. Stolz, The development and fundamental analysis of type-II
VECSELs at 1.2 µm (Conference Presentation), in Vertical External Cavity Surface Emitting
Lasers (VECSELs) VII, vol. 10087 (International Society for Optics and Photonics, 2017),
p. 100870L
75. C. Möller, F. Zhang, C. Fuchs, C. Berger, A. Rehn, A.R. Perez, A. Rahimi-Iman, J. Hader,
M. Koch, J.V. Moloney, S.W. Koch, W. Stolz, Fundamental transverse mode operation of a
type-II vertical-external-cavity surface-emitting laser at 1.2 μm. Electron. Lett. 53, 93–94
(2017)
76. C. Lammers, M. Stein, C. Berger, C. Möller, C. Fuchs, A. Ruiz Perez, A. Rahimi-Iman,
J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, M. Koch, Gain spectroscopy of a type-II VECSEL
chip. Appl. Phys. Lett. 109, 232107 (2016)
77. E.U. Rafailov, M.A. Cataluna, W. Sibbett, Mode-locked quantum-dot lasers. Nat. Photonics
1, 395–401 (2007)
78. M. Gaafar, D.A. Nakdali, C. Möller, K.A. Fedorova, M. Wichmann, M.K. Shakfa, F. Zhang,
A. Rahimi-Iman, E.U. Rafailov, M. Koch, Self-mode-locked quantum-dot vertical-externalcavity surface-emitting laser. Opt. Lett. 39, 4623–4626 (2014)
79. D. Al Nakdali, M.K. Shakfa, M. Gaafar, M. Butkus, K.A. Fedorova, M. Zulonas, M. Wichmann, F. Zhang, B. Heinen, A. Rahimi-Iman, W. Stolz, E.U. Rafailov, M. Koch, High-power
quantum-dot vertical-external-cavity surface-emitting laser exceeding 8 W. IEEE Photonics
Technol. Lett. 26, 1561–1564 (2014)
80. D. Al Nakdali, M. Gaafar, M.K. Shakfa, F. Zhang, M. Vaupel, K.A. Fedorova, A. RahimiIman, E.U. Rafailov, M. Koch, High-power operation of quantum-dot semiconductor disk
laser at 1180 nm. IEEE Photonics Technol. Lett. 27, 1128–1131 (2015)
81. A. Rahimi-Iman, Recent advances in VECSELs. J. Opt. 18, 093003 (2016)
82. M.A. Gaafar, A. Rahimi-Iman, K.A. Fedorova, W. Stolz, E.U. Rafailov, M. Koch, Modelocked semiconductor disk lasers. Adv. Opt. Photonics 8, 370–400 (2016)
83. G.P. Agrawal, N.K. Dutta, Semiconductor Lasers (Springer US, New York, 1993)
84. T. Numai, Fundamentals of Semiconductor Lasers (Springer Japan, Tokyo, 2015)
85. S. Reitzenstein, T. Heindel, C. Kistner, A. Rahimi-Iman, C. Schneider, S. Höfling, A. Forchel,
Low threshold electrically pumped quantum dot-micropillar lasers. Appl. Phys. Lett. 93(6),
061104 (2008)
86. C. Kistner, T. Heindel, C. Schneider, A. Rahimi-Iman, S. Reitzenstein, S. Höfling, A. Forchel,
Demonstration of strong coupling via electro-optical tuning in high-quality QD-micropillar
systems. Opt. Express 16, 15006–15012 (2008)
87. S. Reitzenstein, S. Münch, P. Franeck, A. Rahimi-Iman, A. Löffler, S. Höfling, L. Worschech,
A. Forchel, Control of the strong light-matter interaction between an elongated In 0.3 Ga 0.7 As
quantum dot and a micropillar cavity using external magnetic fields. Phys. Rev. Lett. 103,
127401 (2009)
88. E.M. Purcell, Spontaneous emission probabilities at radio frequencies. Phys. Rev. 69, 681
(1946)
89. L.-J. Wang, G. Cao, T. Tu, H.-O. Li, C. Zhou, X.-J. Hao, Z. Su, G.-C. Guo, H.-W. Jiang, G.-P.
Guo, A graphene quantum dot with a single electron transistor as an integrated charge sensor.
Appl. Phys. Lett. 97, 262113 (2010)
90. R. Waser, Nanoelectronics and Information Technology: Advanced Electronic Materials and
Novel Devices (Wiley, New York, 2012)
91. D.J.P. Ellis, A.J. Bennett, S.J. Dewhurst, C.A. Nicoll, D.A. Ritchie, A.J. Shields, Cavityenhanced radiative emission rate in a single-photon-emitting diode operating at 0.5GHz. New
J. Phys. 10, 043035 (2008)
92. J. Claudon, J. Bleuse, N.S. Malik, M. Bazin, P. Jaffrennou, N. Gregersen, C. Sauvan, P.
Lalanne, J.-M. Gérard, A highly efficient single-photon source based on a quantum dot in a
photonic nanowire. Nat. Photonics 4, 174–177 (2010)
93. T. Heindel, C. Schneider, M. Lermer, S.H. Kwon, T. Braun, S. Reitzenstein, S. Höfling, M.
Kamp, A. Forchel, Electrically driven quantum dot-micropillar single photon source with
34% overall efficiency. Appl. Phys. Lett. 96, 011107 (2010)
6 Effects of Quantisation
74. C. Möller, C. Fuchs, C. Berger, F. Zhang, A. Rahimi-Iman, M. Koch, A.R. Perez, S.W.
Koch, J. Hader, J.V. Moloney, W. Stolz, The development and fundamental analysis of type-II
VECSELs at 1.2 µm (Conference Presentation), in Vertical External Cavity Surface Emitting
Lasers (VECSELs) VII, vol. 10087 (International Society for Optics and Photonics, 2017),
p. 100870L
75. C. Möller, F. Zhang, C. Fuchs, C. Berger, A. Rehn, A.R. Perez, A. Rahimi-Iman, J. Hader,
M. Koch, J.V. Moloney, S.W. Koch, W. Stolz, Fundamental transverse mode operation of a
type-II vertical-external-cavity surface-emitting laser at 1.2 μm. Electron. Lett. 53, 93–94
(2017)
76. C. Lammers, M. Stein, C. Berger, C. Möller, C. Fuchs, A. Ruiz Perez, A. Rahimi-Iman,
J. Hader, J.V. Moloney, W. Stolz, S.W. Koch, M. Koch, Gain spectroscopy of a type-II VECSEL
chip. Appl. Phys. Lett. 109, 232107 (2016)
77. E.U. Rafailov, M.A. Cataluna, W. Sibbett, Mode-locked quantum-dot lasers. Nat. Photonics
1, 395–401 (2007)
78. M. Gaafar, D.A. Nakdali, C. Möller, K.A. Fedorova, M. Wichmann, M.K. Shakfa, F. Zhang,
A. Rahimi-Iman, E.U. Rafailov, M. Koch, Self-mode-locked quantum-dot vertical-externalcavity surface-emitting laser. Opt. Lett. 39, 4623–4626 (2014)
79. D. Al Nakdali, M.K. Shakfa, M. Gaafar, M. Butkus, K.A. Fedorova, M. Zulonas, M. Wichmann, F. Zhang, B. Heinen, A. Rahimi-Iman, W. Stolz, E.U. Rafailov, M. Koch, High-power
quantum-dot vertical-external-cavity surface-emitting laser exceeding 8 W. IEEE Photonics
Technol. Lett. 26, 1561–1564 (2014)
80. D. Al Nakdali, M. Gaafar, M.K. Shakfa, F. Zhang, M. Vaupel, K.A. Fedorova, A. RahimiIman, E.U. Rafailov, M. Koch, High-power operation of quantum-dot semiconductor disk
laser at 1180 nm. IEEE Photonics Technol. Lett. 27, 1128–1131 (2015)
81. A. Rahimi-Iman, Recent advances in VECSELs. J. Opt. 18, 093003 (2016)
82. M.A. Gaafar, A. Rahimi-Iman, K.A. Fedorova, W. Stolz, E.U. Rafailov, M. Koch, Modelocked semiconductor disk lasers. Adv. Opt. Photonics 8, 370–400 (2016)
83. G.P. Agrawal, N.K. Dutta, Semiconductor Lasers (Springer US, New York, 1993)
84. T. Numai, Fundamentals of Semiconductor Lasers (Springer Japan, Tokyo, 2015)
85. S. Reitzenstein, T. Heindel, C. Kistner, A. Rahimi-Iman, C. Schneider, S. Höfling, A. Forchel,
Low threshold electrically pumped quantum dot-micropillar lasers. Appl. Phys. Lett. 93(6),
061104 (2008)
86. C. Kistner, T. Heindel, C. Schneider, A. Rahimi-Iman, S. Reitzenstein, S. Höfling, A. Forchel,
Demonstration of strong coupling via electro-optical tuning in high-quality QD-micropillar
systems. Opt. Express 16, 15006–15012 (2008)
87. S. Reitzenstein, S. Münch, P. Franeck, A. Rahimi-Iman, A. Löffler, S. Höfling, L. Worschech,
A. Forchel, Control of the strong light-matter interaction between an elongated In 0.3 Ga 0.7 As
quantum dot and a micropillar cavity using external magnetic fields. Phys. Rev. Lett. 103,
127401 (2009)
88. E.M. Purcell, Spontaneous emission probabilities at radio frequencies. Phys. Rev. 69, 681
(1946)
89. L.-J. Wang, G. Cao, T. Tu, H.-O. Li, C. Zhou, X.-J. Hao, Z. Su, G.-C. Guo, H.-W. Jiang, G.-P.
Guo, A graphene quantum dot with a single electron transistor as an integrated charge sensor.
Appl. Phys. Lett. 97, 262113 (2010)
90. R. Waser, Nanoelectronics and Information Technology: Advanced Electronic Materials and
Novel Devices (Wiley, New York, 2012)
91. D.J.P. Ellis, A.J. Bennett, S.J. Dewhurst, C.A. Nicoll, D.A. Ritchie, A.J. Shields, Cavityenhanced radiative emission rate in a single-photon-emitting diode operating at 0.5GHz. New
J. Phys. 10, 043035 (2008)
92. J. Claudon, J. Bleuse, N.S. Malik, M. Bazin, P. Jaffrennou, N. Gregersen, C. Sauvan, P.
Lalanne, J.-M. Gérard, A highly efficient single-photon source based on a quantum dot in a
photonic nanowire. Nat. Photonics 4, 174–177 (2010)
93. T. Heindel, C. Schneider, M. Lermer, S.H. Kwon, T. Braun, S. Reitzenstein, S. Höfling, M.
Kamp, A. Forchel, Electrically driven quantum dot-micropillar single photon source with
34% overall efficiency. Appl. Phys. Lett. 96, 011107 (2010)