viii
Foreword by Sung Mo (Steve) Kang
is better suited for graduate students, I would expect that undergraduate textbooks
on electronic circuits would include basic memristor circuits in the not too distant
future.
In the beginning of this book, the authors take the axiomatic approach to
describe the four basic circuit elements, namely R, L, C, and M (memristor),
with focus on interesting cases involving nonlinear characteristics of elements.
Through systematic formulation of circuit equations and rigorous analysis, the
authors illustrate peculiar circuit behaviors of nonlinear RLC circuits, including
oscillations and bifurcations. Theoretical discussions become even more interesting
after including memristors for most general nonlinear RLCM circuits. The introduction of the flux-charge analysis method (FCAM) is not only novel but also uniquely
revealing. The introduction of Kirchhoff’s charge Law (KqL) and Kirchhoff’s flux
Law (KϕL) in lieu of KCL and KVL is enlightening and prepares the readers
for systematic formulation and analysis of RLCM circuits. The application of
FCAM to neuromorphic systems uncovers numerous peculiar dynamic behaviors.
Undoubtedly, this book is unique and provides a rich set of interesting and intriguing
topics for both interested graduate students and researchers. I congratulate the
authors for the publication of this book and hope that the readers will benefit from
studying the contents to enrich the field of memristive nanoelectronics.
Baskin School of Engineering
Sung Mo (Steve) Kang
University of California
SOE Distinguished Chair Professor
Santa Cruz, CA, USA
Chancellor Emeritus, UC Merced
President Emeritus, KAIST
Foreword by Sung Mo (Steve) Kang
is better suited for graduate students, I would expect that undergraduate textbooks
on electronic circuits would include basic memristor circuits in the not too distant
future.
In the beginning of this book, the authors take the axiomatic approach to
describe the four basic circuit elements, namely R, L, C, and M (memristor),
with focus on interesting cases involving nonlinear characteristics of elements.
Through systematic formulation of circuit equations and rigorous analysis, the
authors illustrate peculiar circuit behaviors of nonlinear RLC circuits, including
oscillations and bifurcations. Theoretical discussions become even more interesting
after including memristors for most general nonlinear RLCM circuits. The introduction of the flux-charge analysis method (FCAM) is not only novel but also uniquely
revealing. The introduction of Kirchhoff’s charge Law (KqL) and Kirchhoff’s flux
Law (KϕL) in lieu of KCL and KVL is enlightening and prepares the readers
for systematic formulation and analysis of RLCM circuits. The application of
FCAM to neuromorphic systems uncovers numerous peculiar dynamic behaviors.
Undoubtedly, this book is unique and provides a rich set of interesting and intriguing
topics for both interested graduate students and researchers. I congratulate the
authors for the publication of this book and hope that the readers will benefit from
studying the contents to enrich the field of memristive nanoelectronics.
Baskin School of Engineering
Sung Mo (Steve) Kang
University of California
SOE Distinguished Chair Professor
Santa Cruz, CA, USA
Chancellor Emeritus, UC Merced
President Emeritus, KAIST