154
J. Liu et al.
under grant 2015A030312011. Last but no least, we thank V. Attari from the Texas A&M University
for his detailed review and some useful comments to further improve the quality of this chapter.
References
1. L. Spinella, T. Jiang, N. Tamura et al., Synchrotron x-ray microdiffraction investigation of
scaling effects on reliability for through-silicon vias for 3D integration. IEEE Trans. Device.
Mater. Reliab. 19, 568–571 (2019)
2. J.D. Messemaeker, R.J. Roussel, O.V. Pedreira et al., Statistical distribution of through-silicon
via Cu pumping. IEEE Trans. Device Mater. Reliab. 17, 549–559 (2017)
3. J. Liu, Z. Huang, Y. Zhang et al., Mechanisms of copper protrusion in through-silicon-via
structures at the nanoscale. Jpn. J. Appl. Phys. 58, 016502 (2018)
4. J. Liu, Z. Huang, P. Conway et al., Processing-structure-protrusion relationship of 3D Cu TSVs:
control at the atomic scale. IEEE J. Electron. Devices. Soc. (2019). https://doi.org/10.1109/
JEDS.2019.2947246
5. J. Liu, Z. Huang, P. Conway et al., Microstructural evolution and protrusion simulationsof
Cu-TSVs under different loading conditions. J. Electron. Packag. 10(1115/1), 4044648 (2019)
6. S. Spiesshoefer, Z. Rahman, G. Vangara et al., Process integration for through-silicon vias. J.
Vac. Sci. Technol. A 23, 824–829 (2005)
7. A. Heryanto, W.N. Putra, A. Trigg et al., Effect of copper TSV annealing on via protrusion for
TSV wafer fabrication. J. Electron. Mater. 41, 2533–2542 (2012)
8. T. Jiang, C. Wu, L. Spinella et al., Plasticity mechanism for copper extrusion in through-silicon
vias for three-dimensional interconnects. Appl. Phys. Lett. 103, 211906 (2013)
9. J.D. Messemaeker, O.V. Pedreira, H. Philipsen et al.: Correlation between Cu microstructure
and TSV Cu pumping, in Electronic Components & Technology Conference. (IEEE, 2014), p.
613
10. Y. Wang, A. Ishii, S. Ogata, Transition of creep mechanism in nanocrystalline metals. Phys.
Rev. B 84, 224102 (2011)
11. Y. Wang, F.J. Gao, S. Ogata, Atomistic understanding of diffusion kinetics in nanocrystals from
molecular dynamics simulations. Phys. Rev. B 88, 115413 (2013)
12. M. Song, L. Chen, J. Szpunar, Thermomechanical characteristics of copper through-silicon via
structures. IEEE Trans. Compon. Packag. Manuf. Technol. 5, 225–231 (2015)
13. T. Tian, R. Morusupalli, H. Shin et al., On the mechanical stresses of Cu through-silicon via
(TSV) samples fabricated by SK Hynix vs. SEMATECH-enabling robust and reliable 3-D
interconnect/integrated circuit (IC) technology. Procedia. Eng. 139, 101–111 (2016)
14. K. Kamada, I. Yoshizawa, H. Naramoto, Temperature dependence of total free energy of activation for dislocation motion. I. Copper crystals after electron irradiation. Phys. Status Solidi
A 29, 231–239 (1975)
15. T. Jiang, L. Spinella, J.H. Im et al., Processing effect on via extrusion for through-silicon
vias (TSVs) in 3D interconnects: a comparative study. IEEE Trans. Device Mater. Reliab. 16,
465–469 (2016)
16. F.X. Che, W.N. Putra, A. Heryanto et al., Study on Cu protrusion of through-silicon via. IEEE
Trans. Compon. Packag. Manuf. Technol. 3, 732–739 (2013)
17. K.H. Lu, X. Zhang, S. Ryu et al., Thermo-mechanical reliability of 3-D ICs containing through
silicon vias. in Electronic Components and Technology Conference (IEEE, 2009), p. 630
18. G. Gottstein, Physical foundations of materials science (Springer, Berlin, 2013)
19. X. Yang, Y. Wang, H. Zhai et al., Time-, stress-, and temperature-dependent deformation in
nanostructured copper: creep tests and simulations. J. Mech. Phys. Solids 94, 191–206 (2016)
20. H. Chokshi, An analysis of creep deformation in nanocrystalline materials. Scr. Mater. 34,
1905–1910 (1996)
J. Liu et al.
under grant 2015A030312011. Last but no least, we thank V. Attari from the Texas A&M University
for his detailed review and some useful comments to further improve the quality of this chapter.
References
1. L. Spinella, T. Jiang, N. Tamura et al., Synchrotron x-ray microdiffraction investigation of
scaling effects on reliability for through-silicon vias for 3D integration. IEEE Trans. Device.
Mater. Reliab. 19, 568–571 (2019)
2. J.D. Messemaeker, R.J. Roussel, O.V. Pedreira et al., Statistical distribution of through-silicon
via Cu pumping. IEEE Trans. Device Mater. Reliab. 17, 549–559 (2017)
3. J. Liu, Z. Huang, Y. Zhang et al., Mechanisms of copper protrusion in through-silicon-via
structures at the nanoscale. Jpn. J. Appl. Phys. 58, 016502 (2018)
4. J. Liu, Z. Huang, P. Conway et al., Processing-structure-protrusion relationship of 3D Cu TSVs:
control at the atomic scale. IEEE J. Electron. Devices. Soc. (2019). https://doi.org/10.1109/
JEDS.2019.2947246
5. J. Liu, Z. Huang, P. Conway et al., Microstructural evolution and protrusion simulationsof
Cu-TSVs under different loading conditions. J. Electron. Packag. 10(1115/1), 4044648 (2019)
6. S. Spiesshoefer, Z. Rahman, G. Vangara et al., Process integration for through-silicon vias. J.
Vac. Sci. Technol. A 23, 824–829 (2005)
7. A. Heryanto, W.N. Putra, A. Trigg et al., Effect of copper TSV annealing on via protrusion for
TSV wafer fabrication. J. Electron. Mater. 41, 2533–2542 (2012)
8. T. Jiang, C. Wu, L. Spinella et al., Plasticity mechanism for copper extrusion in through-silicon
vias for three-dimensional interconnects. Appl. Phys. Lett. 103, 211906 (2013)
9. J.D. Messemaeker, O.V. Pedreira, H. Philipsen et al.: Correlation between Cu microstructure
and TSV Cu pumping, in Electronic Components & Technology Conference. (IEEE, 2014), p.
613
10. Y. Wang, A. Ishii, S. Ogata, Transition of creep mechanism in nanocrystalline metals. Phys.
Rev. B 84, 224102 (2011)
11. Y. Wang, F.J. Gao, S. Ogata, Atomistic understanding of diffusion kinetics in nanocrystals from
molecular dynamics simulations. Phys. Rev. B 88, 115413 (2013)
12. M. Song, L. Chen, J. Szpunar, Thermomechanical characteristics of copper through-silicon via
structures. IEEE Trans. Compon. Packag. Manuf. Technol. 5, 225–231 (2015)
13. T. Tian, R. Morusupalli, H. Shin et al., On the mechanical stresses of Cu through-silicon via
(TSV) samples fabricated by SK Hynix vs. SEMATECH-enabling robust and reliable 3-D
interconnect/integrated circuit (IC) technology. Procedia. Eng. 139, 101–111 (2016)
14. K. Kamada, I. Yoshizawa, H. Naramoto, Temperature dependence of total free energy of activation for dislocation motion. I. Copper crystals after electron irradiation. Phys. Status Solidi
A 29, 231–239 (1975)
15. T. Jiang, L. Spinella, J.H. Im et al., Processing effect on via extrusion for through-silicon
vias (TSVs) in 3D interconnects: a comparative study. IEEE Trans. Device Mater. Reliab. 16,
465–469 (2016)
16. F.X. Che, W.N. Putra, A. Heryanto et al., Study on Cu protrusion of through-silicon via. IEEE
Trans. Compon. Packag. Manuf. Technol. 3, 732–739 (2013)
17. K.H. Lu, X. Zhang, S. Ryu et al., Thermo-mechanical reliability of 3-D ICs containing through
silicon vias. in Electronic Components and Technology Conference (IEEE, 2009), p. 630
18. G. Gottstein, Physical foundations of materials science (Springer, Berlin, 2013)
19. X. Yang, Y. Wang, H. Zhai et al., Time-, stress-, and temperature-dependent deformation in
nanostructured copper: creep tests and simulations. J. Mech. Phys. Solids 94, 191–206 (2016)
20. H. Chokshi, An analysis of creep deformation in nanocrystalline materials. Scr. Mater. 34,
1905–1910 (1996)