Chapter 6
Atomic Scale Kinetics of TSV Protrusion
Jinxin Liu, Zhiheng Huang, Paul Conway, and Yang Liu
6.1 Introduction
As discussed in Chap. 4, the microstructure of polycrystalline Cu is an important factor to fully understand the statistical behavior of TSV protrusion. Due to the random
nature of polycrystalline Cu, it is difficult to find a direct relationship between grain
structures and protrusions. Recently, statistical correlation between the microstructure and the protrusion was experimentally characterized by Spinella et al. [1] and
Messemaeker et al. [2]. Following Chap. 5, we provide a review on recent PFC modeling work [3–5] on TSV protrusion from the atomic scale in this chapter. The 2D
two-mode PFC model that is used to reproduce the protrusion behavior lists below,
Electronic supplementary material The online version of this chapter
(https://doi.org/10.1007/978-981-15-7090-2_6) contains supplementary material, which is
available to authorized users.
J. Liu · Z. Huang (B)
School of Materials Science and Engineering, Sun Yat-sen University,
135 West Xingang Road, Guangzhou 510275, China
e-mail: hzh29@mail.sysu.edu.cn
P. Conway
The Wolfson School of Mechanical, Electrical and Manufacturing Engineering,
Loughborough University, Loughborough, Leicestershire LE11 3TU, UK
Y. Liu
School of Electronics and Information Technology, Sun Yat-sen University,
Xiaoguwei Island, Panyu District, Guangzhou 510006, China
© The Editor(s) (if applicable) and The Author(s), under exclusive
license to Springer Nature Singapore Pte Ltd. 2021
Y. Li and D. Goyal (eds.), 3D Microelectronic Packaging,
Springer Series in Advanced Microelectronics 64,
https://doi.org/10.1007/978-981-15-7090-2_6
131
Atomic Scale Kinetics of TSV Protrusion
Jinxin Liu, Zhiheng Huang, Paul Conway, and Yang Liu
6.1 Introduction
As discussed in Chap. 4, the microstructure of polycrystalline Cu is an important factor to fully understand the statistical behavior of TSV protrusion. Due to the random
nature of polycrystalline Cu, it is difficult to find a direct relationship between grain
structures and protrusions. Recently, statistical correlation between the microstructure and the protrusion was experimentally characterized by Spinella et al. [1] and
Messemaeker et al. [2]. Following Chap. 5, we provide a review on recent PFC modeling work [3–5] on TSV protrusion from the atomic scale in this chapter. The 2D
two-mode PFC model that is used to reproduce the protrusion behavior lists below,
Electronic supplementary material The online version of this chapter
(https://doi.org/10.1007/978-981-15-7090-2_6) contains supplementary material, which is
available to authorized users.
J. Liu · Z. Huang (B)
School of Materials Science and Engineering, Sun Yat-sen University,
135 West Xingang Road, Guangzhou 510275, China
e-mail: hzh29@mail.sysu.edu.cn
P. Conway
The Wolfson School of Mechanical, Electrical and Manufacturing Engineering,
Loughborough University, Loughborough, Leicestershire LE11 3TU, UK
Y. Liu
School of Electronics and Information Technology, Sun Yat-sen University,
Xiaoguwei Island, Panyu District, Guangzhou 510006, China
© The Editor(s) (if applicable) and The Author(s), under exclusive
license to Springer Nature Singapore Pte Ltd. 2021
Y. Li and D. Goyal (eds.), 3D Microelectronic Packaging,
Springer Series in Advanced Microelectronics 64,
https://doi.org/10.1007/978-981-15-7090-2_6
131