Resistive Random Access Memory Device
Physics and Array Architectures
Victor Yiqian Zhuo, Zhixian Chen, and King Jien Chui
Abstract Resistive random-access memories (RRAM) has garnered much interest
in recent decades as a strong candidate to replace conventional memories like NAND
flash, SRAM and DRAM. In contrast to the electrical charge changes in flash memories to define memory states, RRAM devices rely on non-volatile, reversible resistance changes within the device, hence its name. Apart from its superior performance:
low power, high speed, high endurance, its simple two-terminal metal-insulatormetal (MIM) structure allows for a more scalable design and simpler fabrication
processes. However, the RRAM is not without its problems and challenges. The
resistive switching property of RRAM is inherently stochastic, resulting in variations between memory states, which could result in bit errors if unaccounted for.
Also, the two-terminal RRAM requires a select device to prevent wrong selection
of devices in an array. This chapter focuses on the redox-RRAM, where resistance
changes take place through redox reactions within the insulator layer of the MIM,
and will describe the basic operating principles of RRAM as well as various RRAM
architectures.
1 Broad Perspective on Nonvolatile Memory
Nonvolatile memory has become an indispensable part of our everyday lives,
powering a wide gamut of applications, from massive data storage such as memory
cards and solid state drives, to consumer electronics like mobile phones, digital
cameras, and music players. Since its invention by Fujio Masuoka [1] and its commercialization by Intel Corporation in 1988 [2], flash memory is the most prominent
nonvolatile memory technology that drives the proliferation of consumer electronics
of increasing functionality and storage density. In less than three decades, flash
memory has grown into a US$20 Billion per year giant in the semiconductor industry
V. Y. Zhuo (B) · Z. Chen · K. J. Chui
Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR),
Singapore, Singapore
e-mail: victor-zhuo@ime.a-star.edu.sg
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
W. S. Lew et al. (eds.), Emerging Non-volatile Memory Technologies,
https://doi.org/10.1007/978-981-15-6912-8_10
319
Physics and Array Architectures
Victor Yiqian Zhuo, Zhixian Chen, and King Jien Chui
Abstract Resistive random-access memories (RRAM) has garnered much interest
in recent decades as a strong candidate to replace conventional memories like NAND
flash, SRAM and DRAM. In contrast to the electrical charge changes in flash memories to define memory states, RRAM devices rely on non-volatile, reversible resistance changes within the device, hence its name. Apart from its superior performance:
low power, high speed, high endurance, its simple two-terminal metal-insulatormetal (MIM) structure allows for a more scalable design and simpler fabrication
processes. However, the RRAM is not without its problems and challenges. The
resistive switching property of RRAM is inherently stochastic, resulting in variations between memory states, which could result in bit errors if unaccounted for.
Also, the two-terminal RRAM requires a select device to prevent wrong selection
of devices in an array. This chapter focuses on the redox-RRAM, where resistance
changes take place through redox reactions within the insulator layer of the MIM,
and will describe the basic operating principles of RRAM as well as various RRAM
architectures.
1 Broad Perspective on Nonvolatile Memory
Nonvolatile memory has become an indispensable part of our everyday lives,
powering a wide gamut of applications, from massive data storage such as memory
cards and solid state drives, to consumer electronics like mobile phones, digital
cameras, and music players. Since its invention by Fujio Masuoka [1] and its commercialization by Intel Corporation in 1988 [2], flash memory is the most prominent
nonvolatile memory technology that drives the proliferation of consumer electronics
of increasing functionality and storage density. In less than three decades, flash
memory has grown into a US$20 Billion per year giant in the semiconductor industry
V. Y. Zhuo (B) · Z. Chen · K. J. Chui
Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR),
Singapore, Singapore
e-mail: victor-zhuo@ime.a-star.edu.sg
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
W. S. Lew et al. (eds.), Emerging Non-volatile Memory Technologies,
https://doi.org/10.1007/978-981-15-6912-8_10
319