Domain Wall Programmable Magnetic
Logic
Sarjoosing Goolaup, Chandrasekhar Murapaka, and Wen Siang Lew
Abstract Traditional micro-electronics work by controlling the flow of electron
charge through transistor switches. Spintronics, which exploits the spin degree of
freedom of electron, can lead to devices that outstrip the performance of traditional
semiconductor technology. The spin moment in magnetic nanostructures by virtue
of their inherent non-volatility can potentially offer the opportunity of ultra-low
power and high speed devices. This chapter describes proof-of-concept devices that
utilize magnetic domain walls in nanowire network to perform logical operations.
A magnetic reconfigurable logic device is discussed, whose operation is mediated
via domain wall motion. The logical operation can be programmed at run-time and
the whole booelan logic family, from simple NOT to complex operations such as
NAND can be obtained. The second part of the chapter explores the feasibility of
encoding logical bit within the internal state of domain wall, leading to mobile data
bits. Simple single to double bits logical operations are demonstrated.
1 Introduction
Spintronics, which combines the spin degree of freedom with the charge transport characteristics of electrons, has the potential to change the basic principles of
logic operations in microelectronics devices [1, 2]. By exploiting the binary state of
electron spin in nanomagnets for logic operation, an all-magnetic logic computing
architecture is possible. This approach has the advantages of non-volatility, zero
S. Goolaup · C. Murapaka · W. S. Lew (B)
Division of Physics and Applied Physics, Nanyang Technological University, Singapore,
Singapore
e-mail: WenSiang@ntu.edu.sg
S. Goolaup
School of Engineering and Innovation, The Open University, Milton Keynes, UK
C. Murapaka
Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology
Hyderabad, Kandi 502285, Telangana, India
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
W. S. Lew et al. (eds.), Emerging Non-volatile Memory Technologies,
https://doi.org/10.1007/978-981-15-6912-8_7
225
Logic
Sarjoosing Goolaup, Chandrasekhar Murapaka, and Wen Siang Lew
Abstract Traditional micro-electronics work by controlling the flow of electron
charge through transistor switches. Spintronics, which exploits the spin degree of
freedom of electron, can lead to devices that outstrip the performance of traditional
semiconductor technology. The spin moment in magnetic nanostructures by virtue
of their inherent non-volatility can potentially offer the opportunity of ultra-low
power and high speed devices. This chapter describes proof-of-concept devices that
utilize magnetic domain walls in nanowire network to perform logical operations.
A magnetic reconfigurable logic device is discussed, whose operation is mediated
via domain wall motion. The logical operation can be programmed at run-time and
the whole booelan logic family, from simple NOT to complex operations such as
NAND can be obtained. The second part of the chapter explores the feasibility of
encoding logical bit within the internal state of domain wall, leading to mobile data
bits. Simple single to double bits logical operations are demonstrated.
1 Introduction
Spintronics, which combines the spin degree of freedom with the charge transport characteristics of electrons, has the potential to change the basic principles of
logic operations in microelectronics devices [1, 2]. By exploiting the binary state of
electron spin in nanomagnets for logic operation, an all-magnetic logic computing
architecture is possible. This approach has the advantages of non-volatility, zero
S. Goolaup · C. Murapaka · W. S. Lew (B)
Division of Physics and Applied Physics, Nanyang Technological University, Singapore,
Singapore
e-mail: WenSiang@ntu.edu.sg
S. Goolaup
School of Engineering and Innovation, The Open University, Milton Keynes, UK
C. Murapaka
Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology
Hyderabad, Kandi 502285, Telangana, India
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
W. S. Lew et al. (eds.), Emerging Non-volatile Memory Technologies,
https://doi.org/10.1007/978-981-15-6912-8_7
225