dielectric, 179
Synthesis gas, 382
Telecommunications, 323
Tellurium, 177, 199, 203, 205
Texturing, 142–144, 166, 168, 180, 193, 197
inverted pyramid, 169
Thermal equilibrium, 52, 131, 410, 411
Thermal velocity, 73, 78
Thermalization, 79, 128, 246
Thermodynamics, 365
Thyristor, 295
gate turn-off, 295
Time
apparent solar, 264, 425
Greenwich mean sidereal, 420
local mean sidereal, 420
mean solar, 425
Tin, 180, 210
Tin oxide, 178, 203, 211, 415
Titanium dioxide, 208, 211, 385
Total reflection, 31
Transition metals, 240
Transmittance, 30, 134
Transparent conducting oxide, 174, 178–180, 193, 296, 370
Trichlorosilane, 158
Trimethyl
-aluminium, 187
-gallium, 187
Synthesis gas, 382
Telecommunications, 323
Tellurium, 177, 199, 203, 205
Texturing, 142–144, 166, 168, 180, 193, 197
inverted pyramid, 169
Thermal equilibrium, 52, 131, 410, 411
Thermal velocity, 73, 78
Thermalization, 79, 128, 246
Thermodynamics, 365
Thyristor, 295
gate turn-off, 295
Time
apparent solar, 264, 425
Greenwich mean sidereal, 420
local mean sidereal, 420
mean solar, 425
Tin, 180, 210
Tin oxide, 178, 203, 211, 415
Titanium dioxide, 208, 211, 385
Total reflection, 31
Transition metals, 240
Transmittance, 30, 134
Transparent conducting oxide, 174, 178–180, 193, 296, 370
Trichlorosilane, 158
Trimethyl
-aluminium, 187
-gallium, 187
