ν
frequency, s
−1
ξ
electric field, Vm
−1
ρ
charge density, A·s·m
−3
σ
capture cross section, m
2
σ r
rms roughness, m
τ
lifetime, relaxation time, s
ϒ
volume, m
3
φ
azimuth angle, −
φ
work function, V
Φ ph
photon flux, m
−2 s
−1
χ
dielectric susceptibility, −
χ
electron affinity, V
Ψ ph
photon flow, s
−1
Ω
solid angle, −
ω
angular frequency (ω = 2πν), s
−1
Subscripts
0
in vacuo
A
acceptor
C
conduction band
D
donor
d
drift
F
Fermi
G
bandgap
frequency, s
−1
ξ
electric field, Vm
−1
ρ
charge density, A·s·m
−3
σ
capture cross section, m
2
σ r
rms roughness, m
τ
lifetime, relaxation time, s
ϒ
volume, m
3
φ
azimuth angle, −
φ
work function, V
Φ ph
photon flux, m
−2 s
−1
χ
dielectric susceptibility, −
χ
electron affinity, V
Ψ ph
photon flow, s
−1
Ω
solid angle, −
ω
angular frequency (ω = 2πν), s
−1
Subscripts
0
in vacuo
A
acceptor
C
conduction band
D
donor
d
drift
F
Fermi
G
bandgap
