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Contents
7. Technology CAD of Strain-Engineered MOSFETs ............................. 205
7.1 TCAD Calibration ............................................................................. 206
7.2 Simulation of Strain-Engineered MOSFETs .................................. 208
7.2.1 Strain-Engineered p-MOSFETs .......................................... 210
7.2.2 Strain-Engineered n-MOSFETs .......................................... 212
7.3 DC Performance ................................................................................ 215
7.4 AC Performance ................................................................................ 220
7.5 Hybrid Orientation Technology for Strain-Engineered
MOSFETs ............................................................................................ 220
7.6 Simulation of Embedded SiGe MOSFETs ...................................... 224
7.7 Summary ............................................................................................ 226
Review Questions ........................................................................................ 226
References ..................................................................................................... 227
8. Reliability and Degradation of Strain-Engineered MOSFETs ......... 229
8.1 NBTI in Strain-Engineered p-MOSFETs ........................................ 231
8.1.1 Quasi-2D Coulomb Mobility Model .................................. 232
8.2 Simulation of NBTI in p-MOSFETs ................................................ 235
8.3 HCI in Strain-Engineered n-MOSFETs .......................................... 237
8.3.1 Degradation Mechanisms ...................................................... 237
8.4 Simulation of HCI in n-MOSFETs ................................................... 238
8.5 Reliability Issues in FinFETs ........................................................... 242
8.6 Summary ............................................................................................ 246
Review Questions ........................................................................................ 247
References ..................................................................................................... 247
9. Process Compact Modelling of Strain-Engineered MOSFETs ......... 249
9.1 Process Variation ............................................................................... 250
9.2 Predictive Technology Modelling .................................................. 251
9.2.1 PTM for FinFET .................................................................... 259
9.3 Process-Aware Design for Manufacturing .................................... 259
9.4 Process Compact Model ................................................................... 261
9.4.1 PCM Analysis ....................................................................... 264
9.5 Process-Aware SPICE Parameter Extraction ................................. 265
9.5.1 Circuit Modelling................................................................. 268
9.6 Summary ............................................................................................ 269
Review Questions ........................................................................................ 270
References ..................................................................................................... 271
10. Process-Aware Design of Strain-Engineered MOSFETs .................... 273
10.1 Process Design Co-Optimisation ................................................... 274
10.2 Classifications of Variation .............................................................. 275
10.3 Designs for Manufacturing and Yield Optimisation .................. 277
10.3.1 Process Optimisation .......................................................... 278
10.3.2 Process Parameterisation .................................................... 278