Hexagonal Boron Nitride (h-BN) in Solutes Separation
183
achieve high-quality and few-layer films, Ar ion beams are employed to sputter the
h-BN on Cu foils. Moreover, magnetron sputtering of B in N 2 /Ar is used to produce
high-quality h-BN on Ru. This procedure leads to two atomic film layers thick,
which thicker films can be grown by adjustment of ambient temperature deposition
and annealing cycles [110, 111].
High area coverage, compatibility in device manufacturing, and decrease in a
required temperature for h-BN formation are some advantages of the high-energy
plasmas usage compared to conventional CVD techniques [112]. Radio-frequency
(RF) magnetron sputtering of a B target is used by Sutter et al. [113] to commit monoand few-layer h-BN in an ultrahigh-vacuum N 2 /Ar atmosphere. Applying Ru(0001)
substance causes N and B species orientation to take into an ordered h-BN layered
film. Undoubtedly, PVD method offers a distinct way to obtain the high-quality and
wafer-scale manufacturing of 2D layered h-BN. However, it is needed to optimize
the crystallinity of the obtained nanosheets and the type of substrates.
6.2 Surface Segregation-Based Method
Surface segregation is well known as a practicable method in manufacturing high
surface area 2D layered substances, which was first planned to fabricate 2D h-BN
[114]. Using heat treatment in a high-vacuum condition, few-layer h-BN nanosheets
were grown by suppling the electropolished Fe–Cl–Ni alloy doped with N and
B. Triangular h-BN fields were seen on the surface of alloy with a layered form,
which offers the controllability of grain morphologies, structural orientations and
number of layers. The structure of Ni(C)/(B, N)/Ni squeezed growth material and
the annealing temperature are the two key controlling parameters in this method. The
diffusing amount of N and B atoms to the metal surface enhances with increasing
the temperature, which uses to control the h-BN thickness.
Surface segregation of the different layers, while the manufacturing of in-plane
heterostructures requires newly developed synthesis methods. Several methods
including direct chemical conversion, templated growth, and patterned regrowth have
been studied for the synthesis of in-plane Gr-h-BN heterostructures. Considering the
segregation growth of individual h-BN and graphene thin films, direct growth of
h-BN/Gr vertical heterostructures by a co-segregation technique was reported [115].
6.3 Pulsed Laser Deposition
The pulsed laser deposition (PLD) is a substituted method for PVD procedure to
reactive sputtering and molecular beam epitaxial. In the present method, fast heating
on the targeted surface is obtained by a focused laser beam pulse with high energy. The
ionized and neutral components, in the form of a normal plasma plume, accelerate to
183
achieve high-quality and few-layer films, Ar ion beams are employed to sputter the
h-BN on Cu foils. Moreover, magnetron sputtering of B in N 2 /Ar is used to produce
high-quality h-BN on Ru. This procedure leads to two atomic film layers thick,
which thicker films can be grown by adjustment of ambient temperature deposition
and annealing cycles [110, 111].
High area coverage, compatibility in device manufacturing, and decrease in a
required temperature for h-BN formation are some advantages of the high-energy
plasmas usage compared to conventional CVD techniques [112]. Radio-frequency
(RF) magnetron sputtering of a B target is used by Sutter et al. [113] to commit monoand few-layer h-BN in an ultrahigh-vacuum N 2 /Ar atmosphere. Applying Ru(0001)
substance causes N and B species orientation to take into an ordered h-BN layered
film. Undoubtedly, PVD method offers a distinct way to obtain the high-quality and
wafer-scale manufacturing of 2D layered h-BN. However, it is needed to optimize
the crystallinity of the obtained nanosheets and the type of substrates.
6.2 Surface Segregation-Based Method
Surface segregation is well known as a practicable method in manufacturing high
surface area 2D layered substances, which was first planned to fabricate 2D h-BN
[114]. Using heat treatment in a high-vacuum condition, few-layer h-BN nanosheets
were grown by suppling the electropolished Fe–Cl–Ni alloy doped with N and
B. Triangular h-BN fields were seen on the surface of alloy with a layered form,
which offers the controllability of grain morphologies, structural orientations and
number of layers. The structure of Ni(C)/(B, N)/Ni squeezed growth material and
the annealing temperature are the two key controlling parameters in this method. The
diffusing amount of N and B atoms to the metal surface enhances with increasing
the temperature, which uses to control the h-BN thickness.
Surface segregation of the different layers, while the manufacturing of in-plane
heterostructures requires newly developed synthesis methods. Several methods
including direct chemical conversion, templated growth, and patterned regrowth have
been studied for the synthesis of in-plane Gr-h-BN heterostructures. Considering the
segregation growth of individual h-BN and graphene thin films, direct growth of
h-BN/Gr vertical heterostructures by a co-segregation technique was reported [115].
6.3 Pulsed Laser Deposition
The pulsed laser deposition (PLD) is a substituted method for PVD procedure to
reactive sputtering and molecular beam epitaxial. In the present method, fast heating
on the targeted surface is obtained by a focused laser beam pulse with high energy. The
ionized and neutral components, in the form of a normal plasma plume, accelerate to