Formation and Transient Photovoltaic
Properties of ZnO/Si Isotype
Heterojunctions by Magnetron
Sputtering
V. Melnik, B. Romanyuk, V. Kladko, V. Popov, O. Gudymenko,
O. Liubchenko, T. Sabov, O. Oberemok, O. Dubikovskyi, JU. Gomeniuk,
O. Kosulya, V. Shmid, A. Podolian, A. Nadtochiy, and O. Korotchenkov
1 Introduction
The integration of thin films with Si technology implies serious limitations of the
minimum thickness of the film, allowing to create an isotype heterojunction with high
quality. This is a particularly competitive task as numerous thermal treatment steps
are usually involved. One of the most important problems in this respect is the need
to avoid the formation of large defect concentrations at the film/substrate boundary.
It is known that zinc oxide exhibits unique properties, which make it interesting for
study and numerous applications [1].
V. Melnik · B. Romanyuk (B) · V. Kladko · V. Popov · O. Gudymenko · O. Liubchenko ·
T. Sabov · O. Oberemok · O. Dubikovskyi · JU. Gomeniuk · O. Kosulya
Lashkaryov Institute of Semiconductor Physics, Prospect Nauki, 41, Kiev 03028, Ukraine
e-mail: romb@isp.kiev.ua
V. Melnik
e-mail: romb@isp.kiev.ua
V. Kladko
e-mail: kladko@isp.kiev.ua
V. Popov
e-mail: romb@isp.kiev.ua
O. Gudymenko
e-mail: gudymen@ukr.net
O. Liubchenko
e-mail: lubchenco.a@gmail.com
T. Sabov
e-mail: tsabov92@gmail.com
O. Oberemok
e-mail: ober@isp.kiev.ua
© Springer Nature Switzerland AG 2021
O. Fesenko and L. Yatsenko (eds.), Nanomaterials and Nanocomposites,
Nanostructure Surfaces, and Their Applications, Springer Proceedings
in Physics 246, https://doi.org/10.1007/978-3-030-51905-6_24
303