Influence of Terahertz Frequency on the Elastic Constants …
69
Fig. 16 The curves of C 2 versus carrier degeneracy under terahertz frequency in quaternary materials for (a) the band structure contains 3 energy band constants, (b) the band structure contains 2
energy band constants and (c) where the band structure defined by a single energy band constant
variations of C 2 versus carrier degeneracy in ternary and quaternary materials for (a)
the band structure contains 3 energy band constants, (b) the band structure contains
2 energy band constants and (c) where the band structure defined by a single energy
band constant, respectively. From Figs. 13, 14, 15 and 16, we note that C 2 decreases
with increasing carrier degeneracy. Figures 17 and 18 exhibit the variations of C 2
versus x in ternary and quaternary materials for (a) the band structure contains 3
energy band constants and (b) the band structure contains 2 energy band constants,
respectively. From Figs. 17 and 18, we note that C 2 changes with increasing x.
Germanium Arsenide for (a) δ = 0 (b) δ = 0, (c) the band structure contains 3
energy band constants, (d) the band structure contains 2 energy band constants and
(e) the band structure contains 2 energy band constants, respectively. It appears that
C 1 decreases with increasing d z in step like fashion and the effect of energy band
constants on the variation of C 1 for quantized films of n-Cadmium Arsenide and nCadmium Germanium Arsenide can be understood from Figs. 19 and 20. Figures 21,
22, 23 and 24 show the curves of the C 1 versus d z under terahertz frequency in quantized films of n-Indium Antimonide, n-Indium Arsenide, in ternary and quaternary
materials for (a) the band structure contains 3 energy band constants, (b) the band
structure contains 2 energy band constants and (c) where the band structure defined
by a single energy band constant, respectively. It appears that C 1 decreases with
increasing d z in step like fashion and influence of energy band constants on the variation of C 1 for quantized films of ternary and quaternary materials can be assessed
from Figs. 21 and 24. In Figs. 25 and 26, we have plotted the C 1 versus carrier
degeneracy under terahertz frequency in quantized films of n-Cadmium Arsenide
69
Fig. 16 The curves of C 2 versus carrier degeneracy under terahertz frequency in quaternary materials for (a) the band structure contains 3 energy band constants, (b) the band structure contains 2
energy band constants and (c) where the band structure defined by a single energy band constant
variations of C 2 versus carrier degeneracy in ternary and quaternary materials for (a)
the band structure contains 3 energy band constants, (b) the band structure contains
2 energy band constants and (c) where the band structure defined by a single energy
band constant, respectively. From Figs. 13, 14, 15 and 16, we note that C 2 decreases
with increasing carrier degeneracy. Figures 17 and 18 exhibit the variations of C 2
versus x in ternary and quaternary materials for (a) the band structure contains 3
energy band constants and (b) the band structure contains 2 energy band constants,
respectively. From Figs. 17 and 18, we note that C 2 changes with increasing x.
Germanium Arsenide for (a) δ = 0 (b) δ = 0, (c) the band structure contains 3
energy band constants, (d) the band structure contains 2 energy band constants and
(e) the band structure contains 2 energy band constants, respectively. It appears that
C 1 decreases with increasing d z in step like fashion and the effect of energy band
constants on the variation of C 1 for quantized films of n-Cadmium Arsenide and nCadmium Germanium Arsenide can be understood from Figs. 19 and 20. Figures 21,
22, 23 and 24 show the curves of the C 1 versus d z under terahertz frequency in quantized films of n-Indium Antimonide, n-Indium Arsenide, in ternary and quaternary
materials for (a) the band structure contains 3 energy band constants, (b) the band
structure contains 2 energy band constants and (c) where the band structure defined
by a single energy band constant, respectively. It appears that C 1 decreases with
increasing d z in step like fashion and influence of energy band constants on the variation of C 1 for quantized films of ternary and quaternary materials can be assessed
from Figs. 21 and 24. In Figs. 25 and 26, we have plotted the C 1 versus carrier
degeneracy under terahertz frequency in quantized films of n-Cadmium Arsenide