A Novel Integrated Power Module with Solid-State …
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Fig. 7 Schematic of the integrated (Device + Cavity + Antenna) power module at THz
on sides—fringing field being responsible for radiation by the antenna as shown in
Fig. 8.
A few issues need to be considered while designing improvised resonant-cap
structure for the oscillator of the integrated power module. Since the diode has to
be grown epitaxially from the substrate, a hole needs to be provided in the ground
plane. Under this condition, we need to include a perturbation factor in the analysis
of the microstrip patch antenna. For analytical modelling and simulation, we have
to resort to defected-ground-state (DGS) analysis of microstrip patch antenna. For
oscillator operation, we need complex conjugate matching of the device and circuit
impedances. Thus, the resonant-cap circuit impedance at the device location needs
to be evaluated, which is expected to be dependent on cap design parameters, so that
we can set the resistive component of resonator smaller than the absolute value of the
negative resistance of IMPATT diode. Again, the scheme for applying DC bias signal
Fig. 8 Radial transmission line structure for source-antenna integration
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Fig. 7 Schematic of the integrated (Device + Cavity + Antenna) power module at THz
on sides—fringing field being responsible for radiation by the antenna as shown in
Fig. 8.
A few issues need to be considered while designing improvised resonant-cap
structure for the oscillator of the integrated power module. Since the diode has to
be grown epitaxially from the substrate, a hole needs to be provided in the ground
plane. Under this condition, we need to include a perturbation factor in the analysis
of the microstrip patch antenna. For analytical modelling and simulation, we have
to resort to defected-ground-state (DGS) analysis of microstrip patch antenna. For
oscillator operation, we need complex conjugate matching of the device and circuit
impedances. Thus, the resonant-cap circuit impedance at the device location needs
to be evaluated, which is expected to be dependent on cap design parameters, so that
we can set the resistive component of resonator smaller than the absolute value of the
negative resistance of IMPATT diode. Again, the scheme for applying DC bias signal
Fig. 8 Radial transmission line structure for source-antenna integration