Influence of Terahertz Frequency on the Elastic Constants …
97
Fig. 70 The curves of C 2 versus E 0 (E/E g ) 1 (electric quantum limit) at terahertz frequency
in accumulation layers of n-Indium Antimonide where (E/E g ) 1 for (a) the band structure
contains 3 energy band constants and (b) the band structure contains 2 energy band constants
Fig. 71 The curves of C 2 versus E 0 (electric quantum limit) at terahertz frequency in accumulation
layers of n-Indium Antimonide where (E/E g ) 1 for (a) the band structure contains 3 energy
band constant
ALs of specific materials of the important 2D electronic compounds as examples
that the elastic constants (C 1 and C 2 ) change with nano-size of the said QFs and
the two-dimensional carrier statistics per unit area in different oscillatory ways. The
influence of electric field for both the limits in inversion layers of non-parabolic
materials has also been studied. Besides, C 1 and C 2 are in nice agreement with our
suggestive relationships for determining them experimentally.
97
Fig. 70 The curves of C 2 versus E 0 (E/E g ) 1 (electric quantum limit) at terahertz frequency
in accumulation layers of n-Indium Antimonide where (E/E g ) 1 for (a) the band structure
contains 3 energy band constants and (b) the band structure contains 2 energy band constants
Fig. 71 The curves of C 2 versus E 0 (electric quantum limit) at terahertz frequency in accumulation
layers of n-Indium Antimonide where (E/E g ) 1 for (a) the band structure contains 3 energy
band constant
ALs of specific materials of the important 2D electronic compounds as examples
that the elastic constants (C 1 and C 2 ) change with nano-size of the said QFs and
the two-dimensional carrier statistics per unit area in different oscillatory ways. The
influence of electric field for both the limits in inversion layers of non-parabolic
materials has also been studied. Besides, C 1 and C 2 are in nice agreement with our
suggestive relationships for determining them experimentally.