614
22 Light-to-Electricity Conversion
(a)
(b)
Fig. 22.33 Scheme of a MSM traveling-wave photodetector in a cross section and b plan view. Adapted from [1848]
(a)
(b)
Fig. 22.34 a Pulse response (FWHM=0.8 ps) and b frequency response (Fourier transform of time response) of a MSM
traveling-wave photodetector (bias 5 V) for various illumination intensities, A: 1 mW, B: 2.2 mW. Adapted from [1848]
Fig. 22.35 First 8-bit
charge coupled device
(1970). The chip (size: 1.5
× 2.5 mm 2 ) consists of 24
closely packed MOS
capacitors (narrow
rectangles in the center
grid). The thick rectangles
at either end of the grid are
input/output terminals
22.3.8 Charge Coupled Devices
The concept of the charge coupled device (CCD), an array of connected photodetectors serving as an
image sensor, was devised by W.S. Boyle and G.E. Smith [143] (Fig. 22.35) and realized [144]. As
textbook for further details [1849, 1850] may serve.
A MIS diode (mostly a silicon-based MOS diode) can be designed as a light detector. The diode
is operated in deep depletion. When a large reverse voltage is applied, initially a depletion layer is
formed and the bands are strongly bent as shown in Fig. 22.36b. We note that in this situation the
22 Light-to-Electricity Conversion
(a)
(b)
Fig. 22.33 Scheme of a MSM traveling-wave photodetector in a cross section and b plan view. Adapted from [1848]
(a)
(b)
Fig. 22.34 a Pulse response (FWHM=0.8 ps) and b frequency response (Fourier transform of time response) of a MSM
traveling-wave photodetector (bias 5 V) for various illumination intensities, A: 1 mW, B: 2.2 mW. Adapted from [1848]
Fig. 22.35 First 8-bit
charge coupled device
(1970). The chip (size: 1.5
× 2.5 mm 2 ) consists of 24
closely packed MOS
capacitors (narrow
rectangles in the center
grid). The thick rectangles
at either end of the grid are
input/output terminals
22.3.8 Charge Coupled Devices
The concept of the charge coupled device (CCD), an array of connected photodetectors serving as an
image sensor, was devised by W.S. Boyle and G.E. Smith [143] (Fig. 22.35) and realized [144]. As
textbook for further details [1849, 1850] may serve.
A MIS diode (mostly a silicon-based MOS diode) can be designed as a light detector. The diode
is operated in deep depletion. When a large reverse voltage is applied, initially a depletion layer is
formed and the bands are strongly bent as shown in Fig. 22.36b. We note that in this situation the