612
22 Light-to-Electricity Conversion
(a)
p
+
n +
p
+
substrate
d
m
h
N -N
A
D
(1-R) 0
exp( x)
E
E C
E V
E F
creation
drift
multiplication
multiplication
region
V r
(i)
(ii)
(iii)
(iv)
(b)
p +
InP
h
N -N
A
D
multiplication
region
(ii)
(iii)
n
InP
n +
InP
InGaAs
(i)
h
V r
Fig. 22.30 a Homo-APD with SAM structure. (i) doping profile, (ii) electric field, (iii) photon flux or electron-hole pair
generation rate and (iv) schematic band diagram under reverse voltage V r with charge-carrier transport. The multiplication
is for α n α p . Adapted from [574]. b (i) Scheme of an InP/InGaAs hetero-APD with SAM structure, (ii) doping profile
and (iii) electric field for small (dashed line) and large (solid line) reverse bias V r . Adapted from [1185]
Fig. 22.31 a TO casing of
Si APD. b Dark current
(blue) (active area
0.2 mm 2 ) and
multiplication factor (red)
as a function of reverse
bias (at 23 ◦ C). Adapted
from [1845]
(a)
(b)
0
8
0
7
0
6
0
4
0
5
0
3
20
Multiplication
10
3
10
2
10
1
10
0
10
1
10
0
10
-1
10
-2
Si APD
22 Light-to-Electricity Conversion
(a)
p
+
n +
p
+
substrate
d
m
h
N -N
A
D
(1-R) 0
exp( x)
E
E C
E V
E F
creation
drift
multiplication
multiplication
region
V r
(i)
(ii)
(iii)
(iv)
(b)
p +
InP
h
N -N
A
D
multiplication
region
(ii)
(iii)
n
InP
n +
InP
InGaAs
(i)
h
V r
Fig. 22.30 a Homo-APD with SAM structure. (i) doping profile, (ii) electric field, (iii) photon flux or electron-hole pair
generation rate and (iv) schematic band diagram under reverse voltage V r with charge-carrier transport. The multiplication
is for α n α p . Adapted from [574]. b (i) Scheme of an InP/InGaAs hetero-APD with SAM structure, (ii) doping profile
and (iii) electric field for small (dashed line) and large (solid line) reverse bias V r . Adapted from [1185]
Fig. 22.31 a TO casing of
Si APD. b Dark current
(blue) (active area
0.2 mm 2 ) and
multiplication factor (red)
as a function of reverse
bias (at 23 ◦ C). Adapted
from [1845]
(a)
(b)
0
8
0
7
0
6
0
4
0
5
0
3
20
Multiplication
10
3
10
2
10
1
10
0
10
1
10
0
10
-1
10
-2
Si APD