604
22 Light-to-Electricity Conversion
Fig. 22.18 Quantum
efficiency and 3 dB cutoff
frequency of a Si pin-diode
at T = 300 K for various
wavelengths of input
radiation. Adapted
from [1838]
Fig. 22.19 a Scheme of
two-dimensional
position-sensing detector
(PSD), b image of PSD.
From [1839]
(a)
(b)
divider. If two pairs of electrodes, one on the front and one on the back of the detector, are fabricated
in orthogonal directions (Fig. 22.19a), the beam position can be measured in both x and y directions.
22.3.5 MSM Photodiodes
A MSM photodiode consists of a piece of semiconductor between two Schottky contacts (MS contacts).
These are typically arranged laterally (as shown in Fig. 22.24b) but will first be considered at the front
and back of the semiconductor [1840]. The band structure in thermodynamic equilibrium is shown in
Fig. 22.20.
22 Light-to-Electricity Conversion
Fig. 22.18 Quantum
efficiency and 3 dB cutoff
frequency of a Si pin-diode
at T = 300 K for various
wavelengths of input
radiation. Adapted
from [1838]
Fig. 22.19 a Scheme of
two-dimensional
position-sensing detector
(PSD), b image of PSD.
From [1839]
(a)
(b)
divider. If two pairs of electrodes, one on the front and one on the back of the detector, are fabricated
in orthogonal directions (Fig. 22.19a), the beam position can be measured in both x and y directions.
22.3.5 MSM Photodiodes
A MSM photodiode consists of a piece of semiconductor between two Schottky contacts (MS contacts).
These are typically arranged laterally (as shown in Fig. 22.24b) but will first be considered at the front
and back of the semiconductor [1840]. The band structure in thermodynamic equilibrium is shown in
Fig. 22.20.