30
2 Bonds
Fig. 2.14 Values of E h and C for various A N B 8−N compounds. The dashed line f i = 0.785 separates 4-fold from
6-fold coordinated structures. Most data taken from [180]
Table 2.1 Ionicity f i (2.10) for various binary compounds
C
0.0
AlAs
0.27
BeO
0.60
CuCl
0.75
Si
0.0
BeS
0.29
ZnTe
0.61
CuF
0.77
Ge
0.0
AlP
0.31
ZnO
0.62
AgI
0.77
Sn
0.0
GaAs
0.31
ZnS
0.62
MgS
0.79
BAs
0.002
InSb
0.32
ZnSe
0.63
MgSe
0.79
BP
0.006
GaP
0.33
HgTe
0.65
CdO
0.79
BeTe
0.17
InAs
0.36
HgSe
0.68
HgS
0.79
SiC
0.18
InP
0.42
CdS
0.69
MgO
0.84
AlSb
0.25
AlN
0.45
CuI
0.69
AgBr
0.85
BN
0.26
GaN
0.50
CdSe
0.70
LiF
0.92
GaSb
0.26
MgTe
0.55
CdTe
0.72
NaCl
0.94
BeSe
0.26
InN
0.58
CuBr
0.74
RbF
0.96
Fig. 2.15 s-Parameter as
defined in (2.11) as a
function of the ionicity f i
(2.10) for various
compound semiconductors.
Dashed lines are guides to
the eye. Data from [185],
value for CuCl from [184]