21.5 Applications and Special Diode Devices
585
Fig. 21.72 a Schematic
layer sequence of pin-diode
(‘i’: intrinsic, ‘π ’: lowly
p-doped), b net impurity
distribution N A − N D , c
space charge and d electric
field in a pin (solid lines)
and a p–π –n (dashed lines)
diode
Fig. 21.73 Band diagram
of a tunneling diode in
thermodynamic
equilibrium (V = 0). V n
and V p characterize the
degeneracies on the n- and
p-side, respectively
p
+
F p
F n
E V
E V
E C
qV n
qV p
E C
n
+
depletion
region
Fig. 21.74 a Static
current-voltage
characteristics of a typical
tunneling diode. Peak and
valley current and voltage
are labeled. b The three
components of the current
(short dashed:
band-to-band tunnel
current, dashed: excess
current, dash-dotted:
thermal current) are shown
separately. Adapted from
[574], ©1981 Wiley
(a)
(b)
585
Fig. 21.72 a Schematic
layer sequence of pin-diode
(‘i’: intrinsic, ‘π ’: lowly
p-doped), b net impurity
distribution N A − N D , c
space charge and d electric
field in a pin (solid lines)
and a p–π –n (dashed lines)
diode
Fig. 21.73 Band diagram
of a tunneling diode in
thermodynamic
equilibrium (V = 0). V n
and V p characterize the
degeneracies on the n- and
p-side, respectively
p
+
F p
F n
E V
E V
E C
qV n
qV p
E C
n
+
depletion
region
Fig. 21.74 a Static
current-voltage
characteristics of a typical
tunneling diode. Peak and
valley current and voltage
are labeled. b The three
components of the current
(short dashed:
band-to-band tunnel
current, dashed: excess
current, dash-dotted:
thermal current) are shown
separately. Adapted from
[574], ©1981 Wiley
(a)
(b)