16
1 Introduction
Table 1.1 Physical properties of various (bulk) semiconductors at room temperature. ‘S’ denotes the crystal structure
(d: diamond, w: wurtzite, zb: zincblende, ch: chalcopyrite, rs: rocksalt)
S
a 0
E g
m ∗
e
m ∗
h
0
n r
μ e
μ h
(nm)
(eV)
(cm 2 /Vs) (cm 2 /Vs)
C
d
0.3567
5.45 ()
5.5
2.42
2200
1600
Si
d
0.5431
1.124 (X) 0.98 (m l ) 0.16 (m lh ) 11.7
3.44
1350
480
0.19 (m t ) 0.5 (m hh )
Ge
d
0.5658
0.67 (L) 1.58 (m l ) 0.04 (m lh ) 16.3
4.00
3900
1900
0.08 (m t ) 0.3 (m hh )
α-Sn
d
0.64892
0.08 () 0.02
2000
1000
3C-SiC
zb
0.436
2.4
9.7
2.7
1000
50
4H-SiC
w
0.3073 (a) 3.26
9.6
2.7
120
1.005 (c)
6H-SiC
w
0.30806
(a)
3.101
10.2
2.7
1140
850
1.5117 (c)
AlN
w
0.3111 (a) 6.2
8.5
3.32
0.4978 (c)
AlP
zb
0.54625
2.43 (X) 0.13
9.8
3.0
80
AlAs
zb
0.56605
2.16 (X) 0.5
0.49 (m lh ) 12
1000
80
1.06
(m hh )
AlSb
zb
0.61335
1.52 X)
0.11
0.39
11
3.4
200
300
GaN
w
0.3189 (a) 3.4 ()
0.2
0.8
12
2.4
1500
0.5185 (c)
GaP
zb
0.54506
2.26 () 0.13
0.67
10
3.37
300
150
GaAs
zb
0.56533
1.42 () 0.067
0.12 (m lh ) 12.5
3.4
8500
400
0.5 (m hh )
GaSb
zb
0.60954
0.72 () 0.045
0.39
15
3.9
5000
1000
InN
w
0.3533 (a) 0.69 ()
0.5693 (c)
InP
zb
0.58686
1.35 () 0.07
0.4
12.1
3.37
4000
600
InAs
zb
0.60584
0.36 () 0.028
0.33
12.5
3.42
22 600
200
InSb
zb
0.64788
0.18 () 0.013
0.18
18
3.75
100 000
1700
ZnO
w
0.325 (a) 3.4 ()
0.24
0.59
6.5
2.2
220
0.5206 (c)
ZnS
zb
0.54109
3.6 ()
0.3
8.3
2.4
110
ZnSe
zb
0.56686
2.58 () 0.17
8.1
2.89
600
ZnTe
zb
0.61037
2.25 () 0.15
9.7
3.56
CdO
rs
0.47
2.16
(continued)