472
17 Magnetic Semiconductors
30% at T = 4.5 K (Fig. 17.9b) [1550]. The interface and its structural nonideality of the interface
presumably prevent the spin injection from being 100% efficient [1551]. Recently, close to pure (95%)
circular polarization has been obtained from a (Al,Ga)As/GaAs-based stripe-laser-like (edge emitting)
structure with Fe/crystalline AlO x spin-tunnel barrier [1552].
17 Magnetic Semiconductors
30% at T = 4.5 K (Fig. 17.9b) [1550]. The interface and its structural nonideality of the interface
presumably prevent the spin injection from being 100% efficient [1551]. Recently, close to pure (95%)
circular polarization has been obtained from a (Al,Ga)As/GaAs-based stripe-laser-like (edge emitting)
structure with Fe/crystalline AlO x spin-tunnel barrier [1552].