462
16 Polarized Semiconductors
Fig. 16.14 a Internal
electric field and b
transition probability for
electron-hole pairs in
pseudomorphic
In x Ga 1−x N/GaN quantum
well (L w = 3 nm) for three
different indium contents x
as labeled. θ denotes the
angle between the c-axis
and the normal of the
interface plane (see inset).
Based on [1512]
(c)
(b)
(a)
Fig. 16.15 a Electric field and b additional confinement potential for electrons due to piezoelectric charges for a strained
In 0.2 Ga 0.8 As/GaAs quantum wire. Adapted from [1502]. c Piezoelectric charge density in a (111)-oriented GaAs wire
with hexagonal cross section. Adapted from [1514]
16.4.4 Piezoelectric Effects in Nanostructures
The strain distribution around zincblende strained quantum wires [1502], (111)-oriented wires
under torsion [1514] and epitaxial (embedded) quantum dots [417] contains shear components and
thus generates piezoelectric fields. In Fig. 16.15a,b, the electric field and potential due to the piezoelec-
16 Polarized Semiconductors
Fig. 16.14 a Internal
electric field and b
transition probability for
electron-hole pairs in
pseudomorphic
In x Ga 1−x N/GaN quantum
well (L w = 3 nm) for three
different indium contents x
as labeled. θ denotes the
angle between the c-axis
and the normal of the
interface plane (see inset).
Based on [1512]
(c)
(b)
(a)
Fig. 16.15 a Electric field and b additional confinement potential for electrons due to piezoelectric charges for a strained
In 0.2 Ga 0.8 As/GaAs quantum wire. Adapted from [1502]. c Piezoelectric charge density in a (111)-oriented GaAs wire
with hexagonal cross section. Adapted from [1514]
16.4.4 Piezoelectric Effects in Nanostructures
The strain distribution around zincblende strained quantum wires [1502], (111)-oriented wires
under torsion [1514] and epitaxial (embedded) quantum dots [417] contains shear components and
thus generates piezoelectric fields. In Fig. 16.15a,b, the electric field and potential due to the piezoelec-