14.4 Quantum Dots
423
Fig. 14.38 Cross-sectional TEM image of a stack of five layers of quantum dots. Due to strain effects, vertical arrangement is achieved
Fig. 14.39 Cross-sectional
STM image of a stack of
five InAs quantum dots in a
GaAs matrix. Individual In
atoms can be observed
in-between the wetting
layers and the quantum
dots. Each quantum dot
layer was formed by
growing 2.4 ML of InAs.
The intended distance
between the quantum dot
layers was 10 nm. Image
size is 55 × 55 nm 2 .
Reprinted with permission
from [1402], ©2003 AIP
Fig. 14.40 Experimentally
observed pairing
probability in MBE-grown
stacks of InAs/GaAs
quantum dots as a function
of the spacer-layer
thickness. Data are taken
from (a) (110) and (b)
(1–10) cross-sectional
TEM images. The filled
circles are fit to data from
theory of correlated island
formation under strain
fields. Reprinted with
permission from [1403],
©1995 APS
423
Fig. 14.38 Cross-sectional TEM image of a stack of five layers of quantum dots. Due to strain effects, vertical arrangement is achieved
Fig. 14.39 Cross-sectional
STM image of a stack of
five InAs quantum dots in a
GaAs matrix. Individual In
atoms can be observed
in-between the wetting
layers and the quantum
dots. Each quantum dot
layer was formed by
growing 2.4 ML of InAs.
The intended distance
between the quantum dot
layers was 10 nm. Image
size is 55 × 55 nm 2 .
Reprinted with permission
from [1402], ©2003 AIP
Fig. 14.40 Experimentally
observed pairing
probability in MBE-grown
stacks of InAs/GaAs
quantum dots as a function
of the spacer-layer
thickness. Data are taken
from (a) (110) and (b)
(1–10) cross-sectional
TEM images. The filled
circles are fit to data from
theory of correlated island
formation under strain
fields. Reprinted with
permission from [1403],
©1995 APS