296
9 Optical Properties
(a)
(b)
Fig. 9.44 a Burstein–Moss effect in CdO. The linear fit is for E g = 2.22(8) eV and m r = 0.113(11) m e . The dashed
lines indicate the confidence interval of ±0.08 eV. Adapted from [921]. b Burstein–Moss effect in ITO (indium-tin-oxide)
versus the ’optical’ carrier density determined from the position of the plasma edge. The dashed line is guide to the eye.
Data from [922]
hh
lh
so
k
E
E V
E V 0
Fig. 9.45 Schematic optical transitions within the valence band
(a)
0.1
-1
0.2
0.4
0.3
0.5
0.6
GaAs:Zn
400
200
100
60
40
20
10
0
(b)
-1
p-GaSb
Fig. 9.46 a Optical absorption spectrum of GaAs:Zn with p = 2.7 × 10 17 cm −3 at T = 84 K. The absorption above
the split-off energy 0 is due to the hh/lh → s-o process. Adapted from [925]. a Optical absorption coefficient of GaSb
with p = 3.2 × 10 16 cm −3 . Experimental data (solid line) and calculation of inter-valence band contribution (squares).
The free carrier contribution is less than 5 cm −1 in the considered spectral range. Adapted from [926]