7.9 Hydrogen in Semiconductors
221
Molecular hydrogen can passivate the so-called A center in Si, an oxygen–vacancy complex [711].
The atomistic configuration of the V–O–H 2 complex is shown in Fig. 7.46. The deep double donor S
in Si with a level at 0.3 eV below the conduction-band edge can also be passivated by two hydrogen
atoms [712].
221
Molecular hydrogen can passivate the so-called A center in Si, an oxygen–vacancy complex [711].
The atomistic configuration of the V–O–H 2 complex is shown in Fig. 7.46. The deep double donor S
in Si with a level at 0.3 eV below the conduction-band edge can also be passivated by two hydrogen
atoms [712].