6.10 Holes
167
(a)
(b)
Fig. 6.42 Effective hole masses from cyclotron resonance experiments (T = 4 K) for heavy and light holes in a Si and
b Ge for the magnetic field in the (110) plane and various azimuthal directions θ. Experimental data (symbols) and fits
(solid lines) using (6.52). Adapted from [515]
(a)
(b)
Fig. 6.43 Luttinger parameters for various III-V semiconductors versus their band gap. a Inverse values of γ 1 (squares)
and γ 2 (diamonds). Dashed lines are guides to the eye. b γ 3 − γ 2 versus band gap
1
m
av
lh
=
2
2
A − B
1 +
2 C
2
15 B 2
.
(6.53b)
Similar to the correlation of the electron mass with the band gap (Fig. 6.34), the Luttinger parameters
are correlated with the band gap as shown in Fig. 6.43. The parameters 1/γ 1 and 1/γ 2 increase about
linearly with E g . The parameter γ 3 − γ 2 , which is responsible for the valence band warping, decreases
with increasing band gap.
167
(a)
(b)
Fig. 6.42 Effective hole masses from cyclotron resonance experiments (T = 4 K) for heavy and light holes in a Si and
b Ge for the magnetic field in the (110) plane and various azimuthal directions θ. Experimental data (symbols) and fits
(solid lines) using (6.52). Adapted from [515]
(a)
(b)
Fig. 6.43 Luttinger parameters for various III-V semiconductors versus their band gap. a Inverse values of γ 1 (squares)
and γ 2 (diamonds). Dashed lines are guides to the eye. b γ 3 − γ 2 versus band gap
1
m
av
lh
=
2
2
A − B
1 +
2 C
2
15 B 2
.
(6.53b)
Similar to the correlation of the electron mass with the band gap (Fig. 6.34), the Luttinger parameters
are correlated with the band gap as shown in Fig. 6.43. The parameters 1/γ 1 and 1/γ 2 increase about
linearly with E g . The parameter γ 3 − γ 2 , which is responsible for the valence band warping, decreases
with increasing band gap.