6.7 Temperature Dependence of the Band Gap
155
Fig. 6.25 Band gap versus
lattice constant for
Ga x In 1−x P and Al x In 1−x P
(lattice matched to GaAs)
as well as for In x Al 1−x As
and In x Ga 1−x As alloys
(lattice matched to InP)
Fig. 6.26 Band gap of
various Zn-based alloys
with mixing in the anion
sublattice. The lines are fits
with (6.30), the bowing
parameter b is labeled.
Data for Zn(S,Se,Te) from
[493], for Zn(O,Se/Te)
from [494]
Fig. 6.27 a Calculated
band structure of
crystalline silicon. b
Calculated band structure
of amorphous silicon with
α = 0.05 (cf. (3.7)). The
solid lines denote the real
part of the energy, the
shaded areas denote the
regions with a width of
twice the imaginary part of
the energies centered
around the real part.
Adapted from [496]
155
Fig. 6.25 Band gap versus
lattice constant for
Ga x In 1−x P and Al x In 1−x P
(lattice matched to GaAs)
as well as for In x Al 1−x As
and In x Ga 1−x As alloys
(lattice matched to InP)
Fig. 6.26 Band gap of
various Zn-based alloys
with mixing in the anion
sublattice. The lines are fits
with (6.30), the bowing
parameter b is labeled.
Data for Zn(S,Se,Te) from
[493], for Zn(O,Se/Te)
from [494]
Fig. 6.27 a Calculated
band structure of
crystalline silicon. b
Calculated band structure
of amorphous silicon with
α = 0.05 (cf. (3.7)). The
solid lines denote the real
part of the energy, the
shaded areas denote the
regions with a width of
twice the imaginary part of
the energies centered
around the real part.
Adapted from [496]