148
6 Band Structure
Table 6.2 Band gaps of various chalcopyrite semiconductors
Material
E g (eV)
E g (eV)
E g (eV)
CuAlS 2
3.5
CuGaS 2
2.5
CuInS 2
1.53
CuAlSe 2
2.71
CuGaSe 2
1.7
CuInSe 2
1.0
CuAlTe 2
2.06
CuGaTe 2
1.23
CuInTe 2
1.0–1.15
AgAlS 2
3.13
AgGaS 2
2.55
AgInS 2
1.87
AgAlSe 2
2.55
AgGaSe 2
1.83
AgInSe 2
1.24
AgAlTe 2
2.2
AgGaTe 2
1.1–1.3
AgInTe 2
1.0
ZnSiP 2
2.96
ZnGeP 2
2.34
ZnSnP 2
1.66
ZnSiAs 2
2.12
ZnGeAs 2
1.15
ZnSnAs 2
0.73
CdSiP 2
2.45
CdGeP 2
1.72
CdSnP 2
1.17
CdSiAs 2
1.55
CdGeAs 2
0.57
CdSnAs 2
0.26
CuAlSe 2
CuAlS 2
CuGaSe 2
T
N
T
N
T
N
Fig. 6.14 Calculated band structures of CuAlS 2 , CuAlSe 2 , and CuGaSe 2 . The absolute values of the gap energies are
incorrect due to LDA calculation. Adapted from [471]
GaN
ZnGeN 2
15
10
5
0
-5
-10
-15
X
Z
U
R
S
Y
X
Z
U
R
S
Y
Fig. 6.15 Calculated (within LDA) band structures of ZnGeN 2 and its related III–V compound GaN, both displayed in
the chalcopyrite (orthorhombic) Brillouin zone to facilitate comparison. Adapted from [472]