4.3 Dislocations
81
(a)
(b)
Fig. 4.12 a Steady-state solubility of impurities (P, As, B and Sb as labeled) in silicon. Solid lines are theoretical
model matching various experimental data. Arrow denotes the melting point of silicon (1410 ◦ ). Adapted from [313].
b Maximum molar solid solubility x s vs. the distribution coefficient for various impurities in crystalline silicon and
germanium. Solid line follows x s = 0.1 k. Adapted from [316]
Fig. 4.13 High resolution
TEM image of a FeP
precipitate in iron-doped
InP. Adapted from [318]
of d 111 = 0.240 nm in [111]-direction, much different from that of InP (d
InP
111 = 0.339 nm). The angle
between the [101] and [111] direction is 50
◦ instead of 35
◦ for InP. This is consistent with orthorhombic
FeP [318]. Typically FeP and FeP 2 precipitates are found in highly Fe-doped InP [319].
4.3 Dislocations
Dislocations are line defects along which the crystal lattice is shifted by a certain amount. The vector
along the dislocation line is called line vector L. A closed path around the dislocation core differs
from that in an ideal crystal. The difference vector is called the Burger’s vector b. Dislocations for
which the Burger’s vector is a vector of the lattice are called full dislocations. In contrast, dislocations
with Burger’s vectors that are not translation vectors of the lattice are called partial dislocations. The
history of dislocation theory is described in [320].
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