62
4 Epitaxial of III-Nitride LED Materials
Fig. 4.17 In-situ monitoring curve under different V/III of coarsening layer
Fig. 4.18 Electrical properties of intrinsic GaN under different V/III ratios of coarsening layer
mixed dislocations meet edge dislocations. If there are two dislocations with respective Burgers vector of b1 and b2, they can merge into a new dislocation with Burgers
vector b3, i.e., b3 = b1 + b2b3 = b1 + b2. If b1 =−b2, then b3 = 0. This indicates that two dislocations can annihilate at the same time. Whether the dislocations
are merged or annihilated, the dislocation density penetrating into the epitaxial layer
can be reduced as shown in Fig. 4.15d, e.
4 Epitaxial of III-Nitride LED Materials
Fig. 4.17 In-situ monitoring curve under different V/III of coarsening layer
Fig. 4.18 Electrical properties of intrinsic GaN under different V/III ratios of coarsening layer
mixed dislocations meet edge dislocations. If there are two dislocations with respective Burgers vector of b1 and b2, they can merge into a new dislocation with Burgers
vector b3, i.e., b3 = b1 + b2b3 = b1 + b2. If b1 =−b2, then b3 = 0. This indicates that two dislocations can annihilate at the same time. Whether the dislocations
are merged or annihilated, the dislocation density penetrating into the epitaxial layer
can be reduced as shown in Fig. 4.15d, e.