Preface
GaN-based high brightness blue Light Emitting Diode (LED) marks the milestone
of Solid State Lighting (SSL) development which expands a brand-new horizon of
illumination. SSL has become one of the most competitive research focuses worldwide. When I was a senior visiting scholar to the USA between 2000 and 2002,
I was impressed by the prototype of such device during a photonics exhibition. I
realized that LEDs could lead revolution of artificial lighting. At the beginning of
2003, together with my colleagues, we made a draft of SSL research development
plan and reported to the Chinese authority in order to emphasize the significance of
developing III-nitrides based LED technology. In the same year, Chinese Ministry
of Science and Technology (MOST) launched the National SSL Project and three
years later, SSL research and development center of Chinese Academy of Sciences
(CAS) was established upon Institute of Semiconductors, CAS, where the authors
are working.
Thanks to continuous support from the government through R&D funding and
hardworking researchers, Chinese SSL technology has made tremendous progress
in full technical chain. It has promoted the construction and improvement of Chinese
SSL industry. The technology has been successfully employed in various important
scenarios, such as Beijing Olympics, Shanghai Expo, etc. The application is a good
demonstration and enables the public experience the fascination of SSL.
SSL technology progress is based on the technology breakthrough in fundamental
problems of wide bandgap semiconductor materials. Improvement of material quality
and quantum efficiency is benefited from low temperature buffer layer and p-type
doping technology. Doping mechanism and density are investigated and improved
by studying first principle calculation, which enables the performance enhancement
of the devices. Although SSL products have been widely used in our daily life,
performance of these products can be further improved. It is necessary to strengthen
basic scientific research to boost the drive force of SSL technology.
Fundamental concept and material property of III-nitrides LEDs is discussed in
Chaps. 2 and 3. Basic concept of material growth and epitaxy technology, concept
of InGaN/GaN multiple-quantum-well-structured blue and green light emitting
diodes, AlGaN/GaN multiple-quantum-well-structured violet light emitting diodes
vii
GaN-based high brightness blue Light Emitting Diode (LED) marks the milestone
of Solid State Lighting (SSL) development which expands a brand-new horizon of
illumination. SSL has become one of the most competitive research focuses worldwide. When I was a senior visiting scholar to the USA between 2000 and 2002,
I was impressed by the prototype of such device during a photonics exhibition. I
realized that LEDs could lead revolution of artificial lighting. At the beginning of
2003, together with my colleagues, we made a draft of SSL research development
plan and reported to the Chinese authority in order to emphasize the significance of
developing III-nitrides based LED technology. In the same year, Chinese Ministry
of Science and Technology (MOST) launched the National SSL Project and three
years later, SSL research and development center of Chinese Academy of Sciences
(CAS) was established upon Institute of Semiconductors, CAS, where the authors
are working.
Thanks to continuous support from the government through R&D funding and
hardworking researchers, Chinese SSL technology has made tremendous progress
in full technical chain. It has promoted the construction and improvement of Chinese
SSL industry. The technology has been successfully employed in various important
scenarios, such as Beijing Olympics, Shanghai Expo, etc. The application is a good
demonstration and enables the public experience the fascination of SSL.
SSL technology progress is based on the technology breakthrough in fundamental
problems of wide bandgap semiconductor materials. Improvement of material quality
and quantum efficiency is benefited from low temperature buffer layer and p-type
doping technology. Doping mechanism and density are investigated and improved
by studying first principle calculation, which enables the performance enhancement
of the devices. Although SSL products have been widely used in our daily life,
performance of these products can be further improved. It is necessary to strengthen
basic scientific research to boost the drive force of SSL technology.
Fundamental concept and material property of III-nitrides LEDs is discussed in
Chaps. 2 and 3. Basic concept of material growth and epitaxy technology, concept
of InGaN/GaN multiple-quantum-well-structured blue and green light emitting
diodes, AlGaN/GaN multiple-quantum-well-structured violet light emitting diodes
vii